ipb065n15n3g Infineon Technologies Corporation, ipb065n15n3g Datasheet - Page 6

• Manufacturer Part Number: ipb065n15n3g
• Description: Optimos?3 Power-transistor
• Manufacturer: Infineon Technologies Corporation

Rev. 2.1
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
20
15
10
DS
=f(T
5
0
4
3
2
1
0
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=100 A; V
20
20
98%
40
GS
T
V
=10 V
j
DS
60
[°C]
[V]
typ
60
100
Coss
Crss
Ciss
80
140
180
100
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
GS
-20
=V
0.5
175 °C
DS
20
270 µA
V
T
SD
j
60
[°C]
1
[V]
2700 µA
25°C, 98%
25 °C
IPB065N15N3 G
100
175°C, 98%
1.5
140
2010-01-25
180
2