ipb065n15n3g Infineon Technologies Corporation, ipb065n15n3g Datasheet
ipb065n15n3g
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ipb065n15n3g Summary of contents
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OptiMOS ™ 3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC • Ideal ...
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Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 3) ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...
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Power dissipation =f tot C 320 280 240 200 160 120 Safe operating area =f =25 ° parameter ...
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Typ. output characteristics =f =25 ° parameter 350 10 V 300 250 200 150 100 Typ. transfer characteristics =f |>2 ...
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Drain-source on-state resistance =f =100 DS(on 98 -60 - Typ. capacitances C =f MHz ...
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Avalanche characteristics =25 Ω =f parameter: T j(start) 1000 100 Drain-source breakdown voltage =f BR(DSS 170 165 160 155 150 ...
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PG-TO263-7: Outline Rev. 2.1 page 8 IPB065N15N3 G 2010-01-25 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...