tpc8407 TOSHIBA Semiconductor CORPORATION, tpc8407 Datasheet - Page 6

• Manufacturer Part Number: tpc8407
• Description: Mosfets Silicon P-/n-channel Mos U-mos/u-mos-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

7. 7. 7. 7. Marking (Note)
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Marking (Note)
Marking (Note)
Marking (Note)
Note 8: Ensure that the channel temperature does not exceed 150.
Note:
Reverse drain current
(pulsed)
Diode forward voltage
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and electronic equipment.
Characteristics
(Note 8)
P-ch
N-ch
P-ch
N-ch
P/N
Symbol
a a a a
V
I
DRP
DSF
Fig.
Fig.
Fig.
Fig. 7.1
= 25
= 25
= 25
= 25    unless otherwise specified)
7.1
7.1
7.1 Marking

I
I
DR
DR
6
= -7.4 A, V
= 9 A, V
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Marking
Marking
Marking
Test Condition
GS
GS
= 0 V
= 0 V
Min




Typ.




2011-03-11
TPC8407
-29.6
Max
-1.2
1.2
36
Rev.1.0
Unit
A
V