tpc8407 TOSHIBA Semiconductor CORPORATION, tpc8407 Datasheet - Page 2

• Manufacturer Part Number: tpc8407
• Description: Mosfets Silicon P-/n-channel Mos U-mos/u-mos-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

4. 4. 4. 4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Note:
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation (single operation)
Power dissipation (per device for dual
operation)
Power dissipation (single operation)
Power dissipation (per device for dual
operation)
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
(t = 10 s)
(t = 10 s)
(t = 10 s)
(t = 10 s)
a a a a
= 25
= 25
= 25
= 25    unless otherwise specified)
(Note 2), (Note 4)
(Note 2), (Note 5)
(Note 3), (Note 4)
(Note 3), (Note 5)
2
(Note 1)
(Note 1)
(Note 6)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P/N
Symbol
V
V
P
P
P
P
E
T
T
I
I
GSS
DSS
I
DP
D(1)
D(2)
D(1)
D(2)
AR
stg
D
AS
ch
-55 to 150
-55 to 150
Rating
-29.6
0.75
0.75
0.45
0.45
±20
±20
-7.4
-7.4
150
150
-30
1.5
1.5
1.1
1.1
30
36
35
52
9
9
2011-03-11
TPC8407
Rev.1.0
Unit
mJ
W
W
W
W


V
A
A
A