tpc8209 TOSHIBA Semiconductor CORPORATION, tpc8209 Datasheet - Page 6

• Manufacturer Part Number: tpc8209
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Ii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
10
1
0.1
* Single pulse
Curves must be derated
linearly with increase in
temperature.
Ta = 25°C
I D max (pluse) *
Drain-source voltage V
1000
100
0.1
10
1
0.001
Safe operating area
1
Single pulse
10 ms*
0.01
V DSS max
DS
10
(V)
1 ms*
0.1
Pulse width t
100
r
th
1
6
- t
w
Device mounted on a glass-epoxy board (a) (Note 2a)
Device mounted on a glass-epoxy board (b) (Note 2b)
t = 10 s
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
w
(S)
10
100
(4)
(1)
(3)
(2)
1000
2003-02-18
TPC8209