tpc8209 TOSHIBA Semiconductor CORPORATION, tpc8209 Datasheet - Page 3

• Manufacturer Part Number: tpc8209
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Ii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
SourceíDrain Ratings and Characteristics
Gate leakage current
Drain cutíOFF current
Drainísource breakdown voltage
Gate threshold voltage
Drainísource ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(Gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Drain reverse current Pulse (Note 1)
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
(Ta = 25°C)
V
V
R
R
Symbol
Symbol
(BR) DSS
(BR) DSS
DS (ON)
DS (ON)
V
I
I
C
I
|Y
C
C
Q
Q
GSS
DSS
DRP
V
Q
t
t
DSF
oss
on
off
tr
t
iss
rss
gd
th
fs
gs
f
g
|
V
V
I
I
V
V
V
V
V
V
I
D
D
DR
GS
DS
DS
GS
GS
DS
DS
DD
Duty < = 1%, t
= 10 mA, V
= 10 mA, V
= 5 A, V
V
= 30 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 4.0 V, I
= 10 V, I
§ 24 V, V
GS
3
10 V
(Ta = 25°C)
0 V
GS
Test Condition
Test Condition
D
D
D
GS
GS
w
D
GS
GS
GS
= 1 mA
= 2.5 A
= 2.5 A
DS
= 0 V
= 10 ms
= 2.5 A
= 0 V
= -20 V
= 0 V
= 0 V, f = 1 MHz
= 10 V, I
—
= 0 V
V
I
DD
D
= 2.5 A
D
~ - 15 V
= 5 A
V
OUT
Min
Min
1.3
—
Š
30
15
¾
Š
Š
Š
Š
Š
Š
Š
Š
Š
Š
Š
—
—
5
Typ.
Typ.
600
160
43
30
10
95
10
35
15
11
Š
Š
Š
¾
Š
—
—
4
9
4
2003-02-18
TPC8209
í1.2
Max
Max
±10
2.5
10
Š
¾
60
40
Š
Š
Š
Š
Š
Š
Š
Š
Š
Š
Š
20
Unit
Unit
m
µA
µA
nC
pF
ns
V
V
S
A
V