tpc8108 TOSHIBA Semiconductor CORPORATION, tpc8108 Datasheet - Page 5

• Manufacturer Part Number: tpc8108
• Description: Silicon P Channel Mos Type U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
3000
1000
300
100
2.0
1.6
1.2
0.8
0.4
50
40
30
20
10
30
0
0
0.1
0
80
Common source
Pulse test
Common source
V GS
f
Ta
(1)
(2)
1 MHz
25°C
V GS
0.3
0 V
40
40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
4 V
10
Capacitance – V
0
1
R
80
DS (ON)
P
D
I D
40
– Ta
I D
3
(1) Device mounted on a
(2) Device mounted on a
t
– Ta
10 s
120
11 A, 5.5 A, 2.5 A
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
11 A, 5.5 A, 2.5 A
80
DS
10
DS
(V)
160
120
30
C iss
C oss
C rss
200
160
100
5
100
0.1
2.0
1.6
1.2
0.8
0.4
10
30
20
10
1
0
0
0
80
0
12
6
V DD
Dynamic input/output characteristics
0.2
V DS
40
20
Drain-source voltage V
Ambient temperature Ta (°C)
Total gate charge Q
24 V
10
0.4
1
0
40
I
DR
V
3
th
0.6
– V
40
6
– Ta
5
V GS
DS
60
V GS
g
0.8
80
12
Common source
I D
Ta
Pulse test
DS
Common source
Ta
Pulse test
Common source
V DS
I D
Pulse test
(nC)
0 V
25°C
11 A
(V)
V DD
25°C
80
1 mA
120
1.0
10 V
2002-03-12
TPC8108
24 V
160
1.2
100
0
30
20
10