tpc8108 TOSHIBA Semiconductor CORPORATION, tpc8108 Datasheet - Page 3

• Manufacturer Part Number: tpc8108
• Description: Silicon P Channel Mos Type U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse
(Note 1)
(Ta
25°C )
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
I
Q
I
C
I
|Y
C
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
t
on
off
gs1
rss
t
iss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty
V
I
I
D
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
GS
3
(Ta
10 V
10 mA, V
10 mA, V
11 A
0 V
1%, t
11 A, V
16 V, V
30 V, V
10 V, I
4 V, I
10 V, I
10 V, I
10 V, V
24 V, V
Test Condition
Test Condition
25°C)
w
D
D
D
D
GS
GS
GS
GS
GS
DS
GS
10 s
5.5 A
1 mA
5.5 A
5.5 A
I
0 V
0 V
20 V
0 V
0 V
0 V, f
D
V
10 V,
DD
5.5 A
V
1 MHz
15 V
OUT
Min
Min
12
0.8
30
15
3510
Typ.
18.5
Typ.
250
600
230
9.5
7.0
24
16
66
77
20
7
2002-03-12
TPC8108
Max
Max
1.2
23
13
2.0
10
10
44
Unit
Unit
m
nC
pF
ns
V
V
S
A
V
A
A