sss2n60a Fairchild Semiconductor, sss2n60a Datasheet - Page 2

• Manufacturer Part Number: sss2n60a
• Description: Advanced Power Mosfet
• Manufacturer: Fairchild Semiconductor

SSS2N60A
O
O
O
O
Symbol
O
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes ;
4
5
2
3
BV/ T
1
BV
V
R
C
t
t
V
I
I
C
C
Q
Q
I
GS(th)
DS(on)
Q
d(on)
d(off)
GSS
DSS
Q
g
I
SM
t
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=150mH, I
I
Pulse Test : Pulse Width = 250 s, Duty Cycle
Essentially Independent of Operating Temperature
t
SD
oss
t
S
rr
SD
DSS
iss
rss
fs
r
gs
gd
f
rr
g
< _
J
2A, di/dt
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller” ) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=1.3A, V
< _
80A/ s, V
Characteristic
Characteristic
DD
=50V, R
DD
< _
BV
G
=27 , Starting T
DSS
(T
, Starting T
C
=25
O
O
< _
4
1
o
C
2%
J
J
Min.
=25
Min.
600
unless otherwise specified)
2.0
=25
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
o
o
C
C
Typ.
0.77
Typ.
1.08
0.62
315
280
2.6
6.7
38
14
12
15
41
16
15
--
--
--
--
--
--
--
--
--
--
Max. Units
Max. Units
-100
100
250
410
5.0
4.0
1.3
1.4
25
45
17
35
40
90
40
21
--
--
--
--
--
6
--
--
V/
nA
nC
pF
ns
ns
V
V
A
V
A
C
o
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
G
DS
=250 A
=2A
F
=25
=25
/dt=100A/ s
=18
=5V,I
=600V
=480V,T
=50V,I
=480V,V
=0V,I
=30V
=-30V
=10V,I
=0V,V
=300V,I
See Fig 13
Test Condition
Test Condition
o
o
POWER MOSFET
See Fig 5
C
C
N-CHANNEL
D
,I
D
,I
DS
=250 A
=250 A
D
D
S
F
=0.65A
=1.3A,V
=2A
=0.65A
D
=25V,f =1MHz
C
GS
=2A,
=125
See Fig 7
=10V,
o
GS
C
=0V
O
O
4
4
O
O
O
O
O
4
4
4
5
5