sss2n60a Fairchild Semiconductor, sss2n60a Datasheet

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sss2n60a

Manufacturer Part Number
sss2n60a
Description
Advanced Power Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

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©1999 Fairchild Semiconductor Corporation
Advanced Power MOSFET
FEATURES
Absolute Maximum Ratings
Thermal Resistance
T
Symbol
Symbol
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 A (Max.) @ V
Lower R
J
R
R
dv/dt
V
V
E
E
I
I
, T
P
I
T
DM
DSS
AR
D
GS
AS
AR
D
L
JC
JA
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
: 3.892
Junction-to-Ambient
Junction-to-Case
(Typ.)
Characteristic
Characteristic
C
=25
C
C
=25
=100
o
DS
C
o
C
)
o
= 600V
C
)
)
O
O
O
O
O
1
2
1
1
3
Typ.
--
--
- 55 to +150
Value
300
0.82
+ _
0.18
600
138
BV
R
I
1.3
1.3
2.3
3.0
23
D
TO-220F
1.Gate 2. Drain 3. Source
6
30
SSS2N60A
1
DS(on)
2
DSS
= 1.3 A
3
Max.
62.5
5.5
= 5
= 600 V
Units
Units
o
W/
V/ns
C
mJ
mJ
W
o
V
A
A
V
A
/W
C
o
C
Rev. B

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sss2n60a Summary of contents

Page 1

... STG Storage Temperature Range Maximum Lead Temp. for Soldering T L Purposes, 1/8” from case for 5-seconds Thermal Resistance Symbol Characteristic R Junction-to-Case JC R Junction-to-Ambient JA ©1999 Fairchild Semiconductor Corporation SSS2N60A BV DSS R DS(on 1 TO-220F = 600V 1.Gate 2. Drain 3. Source Value ...

Page 2

... SSS2N60A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... V , Source-Drain Voltage [V] SD Fig 6. Gate Charge vs. Gate-Source Voltage Total Gate Charge [nC] G SSS2N60A @ Notes : 250 s Pulse Test ...

Page 4

... SSS2N60A Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 @ Notes : 0.8 -75 -50 - 100 T , Junction Temperature [ J Fig 9. Max. Safe Operating Area Operation in This Area is Limited by R DS(on 100 Notes : 150 Single Pulse - ...

Page 5

... DUT 10V DUT R 2 Current Sampling ( Resistor out 90 0.5 rated 10 d(on DSS SSS2N60A Charge d(off off BV DSS 1 ---- 2 -------------------- DSS (t) DS Time t p ...

Page 6

... SSS2N60A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Driver ) DUT ) DUT ) + Same Type as DUT • dv/dt controlled by “R ” G • I controlled by Duty Factor “D” S Gate Pulse Width -------------------------- Gate Pulse Period ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ ...

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