tpcp8701 TOSHIBA Semiconductor CORPORATION, tpcp8701 Datasheet - Page 4

• Manufacturer Part Number: tpcp8701
• Description: Toshiba Transistor Silicon Npn Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.01
0.1
10
1
0.1
※: Single nonrepetitive pulse
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
I C max (Pulsed)※
I C max (Continuous)*
10 s※*
Ta = 25°C
100 ms※*
Collector−emitter voltage V
DC operation
Ta = 25°C
2
1000
).
100
10
0.001
1
Safe operating area
1
10 ms※
0.01
1 ms※
10
CE
100 µs※
0.1
(V)
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta = 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
(1) Single-device operation
(2) Single-device value at dual operation
10 µs※
Pulse width t
100
r
th
– t
1
4
w
w
(s)
1.0
0.8
0.6
0.4
0.2
0
0
10
Collector power dissipation at the single-device
operation is 0.94W.
Collector power dissipation at the single-device value at
dual operation is 0.54W.
Collector power dissipation at the dual operation is set
to 1.08W.
Permissible power dissipation for Q1
Permissible Power Dissipation for
0.2
Simultaneous Operation
DC operation
Ta = 25°C
Mounted on an FR4 board glass epoxy,
1.6 mm thick, Cu area: 645 mm
100
0.4
P
C
(W)
(2)
(1)
1000
0.6
2
)
0.8
2
)
TPCP8701
2006-11-13
1.0