tpcp8701 TOSHIBA Semiconductor CORPORATION, tpcp8701 Datasheet

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tpcp8701

Manufacturer Part Number
tpcp8701
Description
Toshiba Transistor Silicon Npn Epitaxial Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Portable Equipment Applications
Switching Applications
Inverter Lighting Applications
Absolute Maximum Ratings
Small footprint due to small and thin package
High DC current gain : h
Low collector-emitter saturation : V
High-speed switching : t
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation (t = 10s)
Collector power
dissipation (DC)
Junction temperature
Storage temperature range
Note 1: Please use devices on condition that the junction temperature is below 150°C.
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
Pulse (Note 1 )
DC (Note 1)
Single-device
Single-device
Single-device
Single-device
value at dual
value at dual
operation
operation
operation
operation
f
FE
= 120 ns (typ.)
TOSHIBA Transistor Silicon NPN Epitaxial Type
= 400 to 1000 (I
(Ta = 25°C)
CE (sat)
P
P
Symbol
C
C
V
V
V
V
TPCP8701
T
I
CBO
CEO
EBO
CEX
I
CP
(Note 2)
(Note 2)
I
T
stg
C
B
j
= 0.14 V (max)
C
= 0.3 A)
−55 to 150
Rating
1.77
0.95
0.94
0.54
100
300
150
3.0
5.0
80
50
7
1
Unit
mA
°C
°C
W
W
V
V
V
V
A
2
)
Weight: 0.017 g (typ.)
JEDEC
JEITA
TOSHIBA
0.475
1.Emitter1
2.Base1
3.Emitter2
4.Base2
S
0.33±0.05
8
1
0.025
0.65
2.9±0.1
0.17±0.02
5.Collector2
6.Collector2
7.Collector1
8.Collector1
0.05
S
M
5
4
2-3V1C
TPCP8701
A
2006-11-13
B
1.12
1.12
0.28
0.28
A
0.8±0.05
+0.1
+0.13
+0.13
+0.1
-0.11
-0.11
0.05
-0.12
-0.12
Unit: mm
M
B

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tpcp8701 Summary of contents

Page 1

... CEX CEO EBO 300 mA B 1.77 P (Note 0.95 0.94 P (Note 0.54 T 150 °C j −55 to 150 T °C stg 1 TPCP8701 Unit: mm 0.33±0.05 0. 0.475 0.05 M 0.65 2.9±0.1 A 0.8±0.05 0.025 S +0.1 S 0.28 0.17±0.02 -0.11 +0.13 1.12 -0.12 +0.13 1.12 -0.12 +0.1 0.28 -0.11 1.Emitter1 5.Collector2 6.Collector2 2.Base1 7.Collector1 3.Emitter2 8 ...

Page 2

... Ω stg − VCC RL Output IB1 Input IB2 2 TPCP8701 8    5 8701 Type ※ 1  2  Lot No. (Weekly code) Min Typ. Max Unit ⎯ ⎯ 100 nA ⎯ ⎯ 100 nA ⎯ ...

Page 3

... Collector current I 1.0 DC Operation Mounted on an FR4 board glass epoxy, (1) 1.6 mm thick, Cu area: 645 mm 0.8 (1) Single-device operation (2) Single-device value at dual operation 0.6 (2) 0.4 0 1.6 (V) Ambient temperature Ta (°C) (2) 3 TPCP8701 h – 0 (A) C – 100° – 25°C 2 ...

Page 4

... Mounted on an FR4 board glass epoxy, 0.8 1.6 mm thick, Cu area: 645 mm 0.6 0.4 0 0.2 0.4 Permissible power dissipation for 100 Collector power dissipation at the single-device operation is 0.94W. Collector power dissipation at the single-device value at dual operation is 0.54W. Collector power dissipation at the dual operation is set to 1.08W. 4 TPCP8701 (2) ( 1000 2 ) 0.6 0.8 1.0 (W) 2006-11-13 ...

Page 5

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 TPCP8701 030619EAA 2006-11-13 ...

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