m366s3323dts Samsung Semiconductor, Inc., m366s3323dts Datasheet - Page 4

• Manufacturer Part Number: m366s3323dts
• Description: 32mx64 Sdram Dimm Based On 16mx8, 4banks, 4k Refresh, 3.3v Synchronous Drams With Spd
• Manufacturer: Samsung Semiconductor, Inc.

Note :
ABSOLUTE MAXIMUM RATINGS
DC OPERATING CONDITIONS AND CHARACTERISTICS
CAPACITANCE
Recommended operating conditions (Voltage referenced to V
M366S3323DTS
Notes :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Address (A0 ~ A11, BA0 ~ BA1)
RAS, CAS, WE
CKE (CKE0 ~ CKE1)
Clock (CLK0 ~ CLK3)
CS (CS0 ~ CS3)
DQM (DQM0 ~ DQM7)
DQ (DQ0 ~ DQ63)
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V
Parameter
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
IH
IL
DD
(min) = -2.0V AC. The undershoot voltage duration is
Parameter
(max) = 5.6V AC. The overshoot voltage duration is
supply relative to Vss
Pin
(V
DD
V
IN
= 3.3V, T
V
DDQ.
A
= 23 C, f = 1MHz, V
V
Symbol
DD
V
V
V
V
, V
I
OH
OL
LI
IH
IL
DDQ
V
V
Symbol
Symbol
DD
C
IN
C
C
C
C
C
T
C
DQM
ADD
CKE
OUT
, V
I
CLK
, V
P
STG
CS
OS
IN
Min
-0.3
3.0
2.0
2.4
-10
D
REF
OUT
-
DDQ
SS
= 0V, T
= 1.4V
3ns.
3ns.
A
200 mV)
= 0 to 70 C)
Typ
PC133/PC100 Unbuffered DIMM
3.3
3.0
0
-
-
-
Min
45
45
25
15
15
10
13
V
-55 ~ +150
DDQ
-1.0 ~ 4.6
-1.0 ~ 4.6
Max
3.6
0.8
0.4
Value
10
-
16
50
+0.3
Max
85
85
45
21
25
15
18
Rev. 0.1 Sept. 2001
Unit
uA
V
V
V
V
V
I
I
OH
OL
Unit
mA
W
Unit
V
V
C
Note
pF
pF
pF
pF
pF
pF
pF
= -2mA
= 2mA
1
2
3