bsp030-04 NXP Semiconductors, bsp030-04 Datasheet - Page 8

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bsp030-04

Manufacturer Part Number
bsp030-04
Description
Bsp030 N-channel Enhancement Mode Field-effect Transistor
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
9397 750 07268
Product specification
Fig 13. Source (diode forward) current as a function of
T
j
= 25 C and 150 C; V
source-drain (diode forward) voltage; typical
values.
(A)
I S
20
18
16
14
12
10
8
6
4
2
0
0
V GS = 0 V
0.2
0.4
GS
= 0 V
0.6
150 o C
0.8
Tj = 25 o C
V SD (V)
1
03ac29
1.2
Rev. 04 — 26 July 2000
N-channel enhancement mode field-effect transistor
Fig 14. Gate-source voltage as a function of gate
I
D
= 5 A; V
charge; typical values.
V GS
(V)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
DS
0
= 15 V
I D = 5 A
V DS = 15 V
T j = 25 o C
5
10
15
© Philips Electronics N.V. 2000. All rights reserved.
20
25
Q G (nC)
BSP030
30
03ac31
35
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