bsp030-04 NXP Semiconductors, bsp030-04 Datasheet - Page 7

• Manufacturer Part Number: bsp030-04
• Description: Bsp030 N-channel Enhancement Mode Field-effect Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 07268
Product specification
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 25 C and 150 C; V
= 1 mA; V
V GS(th)
junction temperature.
drain current; typical values.
g fs
(S)
(V)
16
14
12
10
2.5
1.5
0.5
8
6
4
2
0
3
2
1
0
0
-60
DS
2
= V
T j = 25 o C
-20
GS
4
6
DS
20
8 10 12 14 16 18 20
min
typ
V DS > I D X R DSon
I
D
60
R
DSon
100
I D (A)
T j ( o C)
140
150 o C
03ac28
03aa34
180
Rev. 04 — 26 July 2000
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
C iss , C oss ,
gate-source voltage.
as a function of drain-source voltage; typical
values.
C rss (pF)
= 0 V; f = 1 MHz
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
(A)
I
D
10 3
0
10 4
10 2
10 -1
DS
= 5 V
0.5
1
min
1
1.5
© Philips Electronics N.V. 2000. All rights reserved.
2
10
typ
V GS (V)
2.5
V DS (V)
BSP030
03aa37
C iss
C oss
03ac30
C rss
3
10 2
7 of 13