hys64t64020em-2.5-b2 Qimonda, hys64t64020em-2.5-b2 Datasheet - Page 12

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hys64t64020em-2.5-b2

Manufacturer Part Number
hys64t64020em-2.5-b2
Description
214-pin Unbuffered Ddr2 Sdram Microdimm Modules Mdimm Sdram
Manufacturer
Qimonda
Datasheet
3
This chapter contains speed grade definition, AC timing parameter and ODT tables.
3.1
Attention: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
1) When
1) Storage Temperature is the case surface temperature on the center/top side of the DRAM.
2) Up to 3000 m.
Rev. 1.10, 2008-03
09032007-YO3V-5RUJ
Symbol
V
V
V
V
Parameter
Storage Temperature
Barometric Pressure (operating & storage)
Operating Humidity (relative)
Storage Humidity (without condensation)
DD
DDQ
DDL
IN
,
V
OUT
V
DD
the device. This is a stress rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect reliability.
and
V
Voltage on
Voltage on
Voltage on
Voltage on any pin relative to
Parameter
DDQ
Electrical Characteristics
Absolute Maximum Ratings
and
V
DDL
V
V
V
are less than 500 mV;
DD
DDQ
DDL
pin relative to
pin relative to
pin relative to
V
V
V
V
SS
SS
SS
SS
V
REF
Symbol
T
PBar
H
H
STG
may be equal to or less than 300 mV.
OPR
STG
12
Values
Min.
– 50
+69
10
5
Unbuffered DDR2 SDRAM MicroDIMM Modules
Rating
Min.
–1.0
–0.5
–0.5
–0.5
HYS64T64020EM–[2.5/3/3S/3.7/5]–B2
Max.
+100
+105
90
95
Environmental Requirements
Max.
+2.3
+2.3
+2.3
+2.3
Absolute Maximum Ratings
Unit
°C
kPa
%
%
Unit
V
V
V
V
Internet Data Sheet
TABLE 8
TABLE 9
Note
1)
2)
Note
1)

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