m470l6423en0-cb3 Samsung Semiconductor, Inc., m470l6423en0-cb3 Datasheet
m470l6423en0-cb3
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m470l6423en0-cb3 Summary of contents
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Unbuffered SODIMM(based on sTSOP) DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 256Mb E-die (x8) with 64-bit Non ECC Revision 1.3 March. 2004 DDR SDRAM Rev. 1.3 March. 2004 ...
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Unbuffered SODIMM(based on sTSOP) Revision History Revision 1.0 (May, 2003) - First release Revision 1.1 (August, 2003) - Corrected typo. Revision 1.2 (December, 2003) - Corrected typo. Revision 1.3 (March, 2004) - Corrected package dimension. DDR SDRAM Rev. 1.3 ...
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... Unbuffered SODIMM(based on sTSOP) 200Pin Unbuffered SODIMM based on 256Mb E-die (x8) Ordering Information Part Number M470L6423EN0-C(L)B3/A2/B0 Operating Frequencies B3(DDR333@CL=2.5) Speed @CL2 Speed @CL2.5 CL-tRCD-tRP Feature • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • ...
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... DQS4 Note These pins are not used in this module. 2. Pins 71, 72, 73, 74, 77, 78, 79, 80, 83, 84 are reserved for x72 module, and are not used on x64 module. Pin 95,122 are NC for 8Mx16 based module & used for 16Mx8 based module. 3. Pins 89, 91 are reserved for x72 modules. ...
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Unbuffered SODIMM(based on sTSOP) FUNCTIONAL BLOCK DIAGRAM CS0 DQS0 DM0 DM CS DQ0 I/O 7 DQ1 I I/O 1 DQ2 DQ3 I/O 0 I/O 5 DQ4 DQ5 I/O 4 I/O 3 DQ6 I/O 2 DQ7 DQS1 DM1 ...
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Unbuffered SODIMM(based on sTSOP) Absolute Maximum Ratings Parameter Voltage on any pin relative to V Voltage on V & V supply relative DDQ Storage temperature Power dissipation Short circuit current Note : Permanent device damage may ...
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... Unbuffered SODIMM(based on sTSOP) DDR SDRAM IDD spec table M470L6423EN0 [ (32M 512MB Non ECC Module ] Symbol B3(DDR333@CL=2.5) IDD0 1,160 IDD1 1,360 IDD2P IDD2F 400 IDD2Q 320 IDD3P 560 IDD3N 880 IDD4R 1,720 IDD4W 1,720 IDD5 1,800 IDD6 Normal Low power ...
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... CIN5 12 Cout1 12 Cout2 DDR SDRAM Max Max Unit Unit Note Note V V VREF - 0.31 VREF - 0. VDDQ+0.6 VDDQ+0 0.5*VDDQ+0.2 0.5*VDDQ+0 (VDD=2.5V, VDDQ=2.5V, TA= 25qC, f=1MHz) M470L6423EN0 Unit Max Rev. 1.3 March. 2004 ...
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Unbuffered SODIMM(based on sTSOP) AC Timming Parameters & Specifications Parameter Row cycle time Refresh row cycle time Row active time RAS to CAS delay Row precharge time Row active to Row active delay Write recovery time Last data in ...
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Unbuffered SODIMM(based on sTSOP) Parameter Mode register set cycle time DQ & DM setup time to DQS DQ & DM hold time to DQS Control & Address input pulse width DQ & DM input pulse width Power down exit ...
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Unbuffered SODIMM(based on sTSOP) 8. I/O Setup/Hold Plateau Derating I/O Input Level (mV) r280 This derating table is used to increase tDS/tDH in the case where the input level is flat below VREF r310mV for a duration of up ...
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Unbuffered SODIMM(based on sTSOP) Command Truth Table COMMAND Register Extended MRS Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Exit Bank Active & Row Addr. Read & Auto Precharge Disable Column Address Auto Precharge Enable Write & ...
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Unbuffered SODIMM(based on sTSOP) PACKAGE DIMENSIONS 0.16 r0.039 (4.00 r0.10) 0.086 2.15 0.098 2.45 0.150 Max (3.80 Max) r 0.04 0.0039 r (1.00 0.10) Tolerances : r.006(.15) unless otherwise specified The used device is 32Mx8 DDR SDRAM, sTSOP-300mil SDRAM ...