k4s560832h Samsung Semiconductor, Inc., k4s560832h Datasheet - Page 8

• Manufacturer Part Number: k4s560832h
• Description: 256mb H-die Sdram
• Manufacturer: Samsung Semiconductor, Inc.

(Recommended operating condition unless otherwise noted, T
DC CHARACTERISTICS (x4, x8)
SDRAM 256Mb H-die (x4, x8, x16)
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S5604(08)32H-T(U)C
4. K4S5604(08)32H-T(U)L
5. Unless otherwise noticed, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC3
CC2
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS CKE & CLK ≤ V
NS
PS CKE & CLK ≤ V
NS
P
N
P
N
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
CKE ≤ V
CKE ≥ V
Input signals are changed one time during 20ns
CKE ≥ V
Input signals are stable
4banks Activated.
t
t
CKE ≤ 0.2V
Burst length = 1
t
I
I
Page burst
CCD
RC
RC
O
O
= 0 mA
= 0 mA
≥ t
≥ t
= 2CLKs
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS ≥ V
(min), CLK ≤ V
(min), CS ≥ V
(min), CLK ≤ V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
= 0 to 70°C)
IH
IH
CC
CC
IL
IL
(min), t
(min), t
IH
(max), t
(max), t
/V
= ∞
= ∞
IL
=V
CC
CC
DDQ
CC
CC
= 10ns
= 10ns
= ∞
= ∞
/V
C
L
SSQ
).
Rev. 1.0 October 2005
Version
100
180
1.5
75
80
20
10
25
25
2
2
6
6
3
CMOS SDRAM
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2
3
4