k4s64323lh Samsung Semiconductor, Inc., k4s64323lh Datasheet - Page 5

• Manufacturer Part Number: k4s64323lh
• Description: 512k X 32bit X 4 Banks Mobile Sdram In 90fbga
• Manufacturer: Samsung Semiconductor, Inc.

DC CHARACTERISTICS
K4S64323LH - F(H)E/N/G/C/L/F
Recommended operating conditions (Voltage referenced to V
NOTES:
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Internal TCSR can be supported.
4. K4S64323LH-F(H)E/C**
5. K4S64323LH-F(H)N/L**
6. K4S64323LH-F(H)S/R**
7. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ).
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
In commercial Temp : Max 40qC/Max 70qC, In extended Temp : Max 40qC/Max 85qC
Parameter
Symbol
I
I
I
I
CC2
CC3
CC2
I
CC3
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC
CC
CC
CC1
NS
NS
PS CKE & CLK dV
PS CKE & CLK dV
4
5
6
P
N
P
N
CKE dV
CKE tV
Input signals are changed one time during
20ns
CKE tV
Input signals are stable
CKE dV
CKE tV
Input signals are changed one time during
20ns
CKE tV
Input signals are stable
t
CKE d0.2V
t
I
Page burst
4Banks Activated
t
RC
Burst length = 1
I
RC
O
O
CCD
= 0 mA
= 0 mA
tt
tt
= 2CLKs
RC
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS tV
(min), CLK dV
(min), CS tV
(min), CLK dV
Test Condition
IL
IL
(max), t
(max), t
CC
CC
-G/F
= 10ns
= 10ns
SS
IH
IH
= 0V, T
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
1/2 of Full Array
1/4 of Full Array
Internal TCSR
= f
= f
-E/C
-N/L
Full Array
A
CC
CC
= -25 to 85qC for Extended, -25 to 70qC for Commercial)
CC
CC
= 10ns
= 10ns
= f
= f
120
-60
75
90
Max 40
160
140
120
115
-75
70
85
Version
1000
300
0.5
0.5
10
20
20
7
5
5
Mobile-SDRAM
-1H
110
Max 85/70
70
70
300
240
220
100
-1L
65
70
February 2004
Unit
mA
mA
mA
mA
mA
mA
mA
mA
uA
qC
uA
Note
1
1
2
4
5
3
6