k4s160822d Samsung Semiconductor, Inc., k4s160822d Datasheet - Page 6

• Manufacturer Part Number: k4s160822d
• Description: 2mx8 Sdram 1m X 8bit X 2 Banks Synchronous Dram Lvttl
• Manufacturer: Samsung Semiconductor, Inc.

K4S160822D
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Notes :
Operating current
(One bank active)
Precharge standby current in
power-down mode
Precharge standby current in
non power-down mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
1. Unless otherwise notes, Input level is CMOS(V
2. Measured with outputs open.
3. Refresh period is 32ms.
4. K4S160822DT-G**
5. K4S160822DT-F**
Parameter
Symbol
I
I
I
I
CC2
I
CC2
CC3
I
CC3
I
I
CC2
CC3
I
CC2
CC3
I
I
I
CC1
CC4
CC5
CC6
NS
NS
PS
PS
P
N
P
N
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 30ns
CKE
Input signals are stable
I
Page burst
2Banks activated
t
t
CKE
RC
o
o
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
(min)
IL
IH
IH
IL
IH
IH
(min)
(max), t
(max), t
Test Condition
(min), CS
(min), CLK
(min), CS
(min), CLK
IH
V
V
IL
IL
/V
(max), t
(max), t
CC
CC
IL
A
=V
= 0 to 70 C)
= 15ns
= 15ns
- 6 -
V
V
DDQ
V
V
IH
IH
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
/V
=
=
SSQ
CC
CC
) in LVTTL.
CC
CC
= 15ns
= 15ns
=
=
Latency
CAS
3
2
100
120 110
95
-7
90
85
-8
90
Version
250
15
25
15
-H
85
95
95
2
2
5
3
3
1
CMOS SDRAM
Rev. 1.0 (Oct. 1999)
85
95
85
-L
-10
75
95
85
80
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
uA
Note
1
1
2
3
4