k4d263238k Samsung Semiconductor, Inc., k4d263238k Datasheet - Page 13

• Manufacturer Part Number: k4d263238k
• Description: 128mbit Gddr Sdram 1m X 32bit X 4 Banks Double Data Rate Synchronous Dram With Bi-directional Data Strobe And Dll
• Manufacturer: Samsung Semiconductor, Inc.

AC CHARACTERISTICS
Simplified Timing @ BL=2, CL=3
K4D263238K
CK cycle time
CK high level width
CK low level width
DQS out access time from CK
Output access time from CK
Data strobe edge to Dout edge
Read preamble
Read postamble
CK to valid DQS-in
DQS-In setup time
DQS-in hold time
DQS write postamble
DQS-In high level width
DQS-In low level width
Address and Control input setup
Address and Control input hold
DQ and DM setup time to DQS
DQ and DM hold time to DQS
Clock half period
Data output hold time from DQS
COMMAND
CK, CK
DQS
DM
DQ
CS
READA
Parameter
0
CL=3
1
1
tCK
tCH
tCL
tDQSCK
tAC
tDQSQ
tRPRE
tRPST
tDQSS
tWPRES
tWPREH
tWPST
tDQSH
tDQSL
tIS
tIH
tDS
tDH
tHP
tQH
Symbol
2
tRPRE
tAC
tCH
tCK
tCHmin
tHP-0.4
tCLmin
0.45
0.85
3
0.45
0.35
Min
-0.6
-0.6
4.0
0.9
0.4
0.4
0.4
0.4
0.9
0.9
0.4
0.4
tDQSCK
or
0
tCL
-
Da1
tDQSQ
- 13/19 -
-40
tRPST
Da2
4
Max
0.55
0.55
1.15
0.6
0.6
0.4
1.1
0.6
0.6
0.6
0.6
10
-
-
-
-
-
-
-
-
tIS
tIH
WRITEB
5
t
WPRES
tHP-0.45
tCHmin
tCLmin
0.45
0.45
0.25
0.45
0.45
tDQSS
Min
-0.7
-0.7
5.0
0.9
0.4
0.8
0.4
0.4
0.4
1.0
1.0
or
0
-
t
WPREH
128M GDDR SDRAM
tDS tDH
6
-50
Db0
tDQSH
+0.45
+0.7
Db1
Max
0.55
0.55
+0.7
1.1
0.6
1.2
0.6
0.6
0.6
10
Rev. 1.1 July 2007
-
-
-
-
-
-
-
-
tWPST
7
Unit
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8
Note
Hi-Z
Hi-Z