k4d263238k Samsung Semiconductor, Inc., k4d263238k Datasheet - Page 11

• Manufacturer Part Number: k4d263238k
• Description: 128mbit Gddr Sdram 1m X 32bit X 4 Banks Double Data Rate Synchronous Dram With Bi-directional Data Strobe And Dll
• Manufacturer: Samsung Semiconductor, Inc.

AC INPUT OPERATING CONDITIONS
Recommended operating conditions Unless Otherwise Noted, T
K4D263238K
DC CHARACTERISTICS
Recommended operating conditions(Voltage referenced to V
Note :
Operating Current
(One Bank Active)
Precharge Standby Current
in Power-down mode
Precharge Standby Current
in Non Power-down mode
Active Standby Current
power-down mode
Active Standby Current in
in Non Power-down mode
Note: 1. Measured with outputs open.
Operating Current
Refresh Current
Self Refresh Current
Input High (Logic 1) Voltage; DQ
Input Low (Logic 0) Voltage; DQ
Clock Input Differential Voltage; CK and CK
Clock Input Crossing Point Voltage; CK and CK
( Burst Mode)
1. V
2. The value of V
2. Refresh period is 32ms.
Parameter
ID
is the magnitude of the difference between the input level on CK and the input level on CK
Parameter
IX
is expected to equal 0.5*V
Symbol
I
I
I
I
I
I
I
I
CC1
CC2
CC2
CC3
CC3
CC4
CC5
CC6
P
N
P
N
Burst Lenth=2
I
CKE ≤ V
CKE ≥ V
t
CKE ≤ V
CKE ≥ VIH(min), CS ≥ VIH(min),
t
I
Burst, All Banks activated.
t
CKE ≤ 0.2V
OL
OL
CC
CC
RC
=0mA ,
=0mA,
=
=
≥
t
t
t
CC
CC
RFC
(min).
IL
IH
IL
(min) .
DDQ
Test Condition
(max),
(min)
(max),
t
t
(min), CS ≥ V
Symbol
CC
CC
V
V
V
of the transmitting device and must track variations in the DC level of the same
=
=
V
IH
ID
IX
IL
t
t
t
RC
CC
CC
SS
t
t
CC
CC
(min)
(min), Page
=0V, V
≥
=
=
- 11/19 -
t
RC
t
t
CC
CC
IH
(min)
0.5*V
(min)
(min)
(min),
V
DD
A
REF
=0 to 65°C)
/ V
Min
0.7
DDQ
+0.35
-
DDQ
-0.2
=2.5V+
5%,
189
153
402
159
-40
20
48
78
Typ
-
-
-
-
T
A
=0 to 65°C)
Version
128M GDDR SDRAM
10
0.5*V
V
V
REF
DDQ
Max
DDQ
-
-0.35
170
134
344
135
-50
+0.6
20
43
67
+0.2
Rev. 1.1 July 2007
Unit
V
V
V
V
Unit
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
2
Note
1
2