k4t1g084qq Samsung Semiconductor, Inc., k4t1g084qq Datasheet - Page 19

• Manufacturer Part Number: k4t1g084qq
• Description: 1gb Q-die Ddr2 Sdram Specification
• Manufacturer: Samsung Semiconductor, Inc.

K4T1G084QQ
K4T1G164QQ
12.0 Input/Output capacitance
13.0 Electrical Characteristics & AC Timing for DDR2-800/667
13.1 Refresh Parameters by Device Density
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
K4T1G044QQ
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
Refresh to active/Refresh command time
Average periodic refresh interval
Bin (CL - tRCD - tRP)
(0 °C < T
Parameter
tCK, CL=3
tCK, CL=4
tCK, CL=5
tCK, CL=6
Speed
tRCD
tRAS
tRP
tRC
OPER
Parameter
< 95 °C; V
Parameter
DDQ
3.75
12.5
12.5
57.5
min
2.5
45
5
-
= 1.8V + 0.1V; V
DDR2-800(E7)
5-5-5
tRFC
tREFI
70000
max
8
8
8
-
-
-
-
DD
0 °C ≤ T
85 °C < T
= 1.8V + 0.1V)
Symbol
CASE
19 of 44
CASE
3.75
min
2.5
15
15
60
45
≤ 85°C
3
-
≤ 95°C
DDR2-800(F7)
Symbol
CDCK
CDIO
CCK
CDI
CIO
6-6-6
CI
70000
max
256Mb
8
8
8
-
-
-
-
7.8
3.9
75
Min
1.0
1.0
2.5
x
x
x
DDR2-667
512Mb
105
7.8
3.9
3.75
min
15
15
60
45
Max
0.25
0.25
2.0
2.0
3.5
0.5
5
3
-
DDR2-667(E6)
127.5
1Gb
5 - 5 - 5
7.8
3.9
Rev. 1.03 February 2008
Min
1.0
1.0
2.5
x
x
x
70000
DDR2-800
DDR2 SDRAM
max
2Gb
195
7.8
3.9
8
8
8
-
-
-
-
Max
0.25
1.75
0.25
2.0
3.5
0.5
327.5
4Gb
7.8
3.9
Units
ns
ns
ns
ns
ns
ns
ns
ns
Units
Units
pF
pF
pF
pF
pF
pF
µs
µs
ns