uaa3592 NXP Semiconductors, uaa3592 Datasheet - Page 6

• Manufacturer Part Number: uaa3592
• Description: Wideband Code Division Multiple Access Frequency Division Duplex Power Amplifier
• Manufacturer: NXP Semiconductors

Philips Semiconductors
DC CHARACTERISTICS
V
AC CHARACTERISTICS
V
measured and guaranteed on Philips evaluation board; unless otherwise specified.
2002 Jul 02
V
V
I
I
Inputs EN and ICTL
V
V
P
P
N
H2
H3
CPR
CPR
RL
G
C1(q)
leak
C1
C1
G
C1
reg
IL
IH
i
o(max)
o(RX)
Wideband code division multiple access
frequency division duplex power amplifier
(ripple)
SYMBOL
SYMBOL
i
= 3.6 V; V
= 3.6 V; V
(adj)
(alt)
reg
reg
= 2.7 V; T
= 2.7 V; T
supply voltage for the
first stage collector
regulated supply
voltage
quiescent supply
current
leakage current
LOW-level input voltage
HIGH-level input
voltage
input power
maximum output power T
efficiency
output noise in RX
band
second-harmonic level
third-harmonic level
adjacent channel power
ratio
first alternate channel
power ratio
input return loss
ripple gain
gain variation
PARAMETER
PARAMETER
amb
amb
= 25 C; unless otherwise specified.
= 25 C; f
RF
pin ICTL is LOW
pin ICTL is HIGH
V
T
V
at 190 MHz offset;
f
B = 3.84 MHz; at 5 MHz from
carrier frequency
B = 3.84 MHz; at 10 MHz
from carrier frequency
T
f
f
P
is LOW
= 1920 to 1980 MHz; P
RF
RF
RF
amb
amb
amb
f
C1
C1
o
RF
up to 24.5 dBm; pin ICTL
= 2110 to 2170 MHz
= 1.5 to 2.5 GHz
= 1920 to 1980 MHz
= 4.5 V; pin EN is LOW
= 3.25 V
= 5 MHz;
= 30 to +70 C
= 30 to +70 C;
= 30 to +70 C;
CONDITIONS
CONDITIONS
6
i
adjusted for P
3.25
2.6
1.5
22.5
30
6
MIN.
MIN.
o
= 24.5 dBm; R
3.6
2.7
TYP.
TYP.
Objective specification
4.5
3
50
25
5
1.1
0
0.5
tbf
ext
135
40
45
37
47
6
MAX.
MAX.
= 2.2 k ;
UAA3592
V
V
mA
mA
V
V
dBm
dBm
%
dBm/Hz
dBc
dBc
dBc
dBc
dB
dB
dB
A
UNIT
UNIT