sp000088488 Infineon Technologies Corporation, sp000088488 Datasheet - Page 6

• Manufacturer Part Number: sp000088488
• Description: N-channel Mosfets >500v?900v Power Transistor
• Manufacturer: Infineon Technologies Corporation

Rev. 1.0
9 Typ. gate charge
V
parameter: V
11 Avalanche energy
E
GS
AS
=f(T
=f(Q
800
600
400
200
10
9
8
7
6
5
4
3
2
1
0
0
20
j
0
); I
gate
D
); I
=11 A; V
DD
D
10
=16 A pulsed
60
DD
20
=50 V
Q
T
gate
100
j
30
[°C]
[nC]
120 V
40
140
400 V
50
180
page 6
60
10 Forward characteristics of reverse diode
I
parameter: T
12 Drain-source breakdown voltage
V
F
=f(V
BR(DSS)
10
700
660
620
580
540
10
10
10
SD
-1
2
1
0
-60
=f(T
)
0
j
); I
j
-20
D
=0.25 mA
0.5
150 °C
20
V
T
SD
j
60
25 °C
[°C]
1
[V]
100
IPB60R125CP
25 °C, 98%
150 °C, 98%
1.5
140
2007-02-06
180
2