sp000088488 Infineon Technologies Corporation, sp000088488 Datasheet - Page 2

• Manufacturer Part Number: sp000088488
• Description: N-channel Mosfets >500v?900v Power Transistor
• Manufacturer: Infineon Technologies Corporation

Rev. 1.0
Maximum ratings, at T
Parameter
Continuous diode forward current
Diode pulse current
Reverse diode dv /dt
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
Soldering temperature,
wave- & reflowsoldering allowed
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
2)
4)
j
=25 °C, unless otherwise specified
j
=25 °C, unless otherwise specified
Symbol Conditions
Symbol Conditions
I
I
dv /dt
R
R
T
V
V
I
I
R
R
S
S,pulse
DSS
GSS
sold
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
T
SMD version, device
on PCB, minimal
footprint
SMD version, device
on PCB, 6 cm
area
reflow MSL1
V
V
V
T
V
T
V
V
T
V
T
f =1 MHz, open drain
page 2
C
j
j
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=150 °C
=25 °C
=150 °C
=25 °C
=V
=600 V, V
=600 V, V
=0 V, I
=20 V, V
=10 V, I
=10 V, I
5)
GS
, I
D
D
=250 µA
D
D
=1.1 mA
DS
=16 A,
=16 A,
2
GS
GS
=0 V
cooling
=0 V,
=0 V,
min.
600
2.5
-
-
-
-
-
-
-
-
-
-
Values
Value
0.11
0.30
typ.
2.1
16
82
15
35
20
3
-
-
-
-
-
-
IPB60R125CP
0.125 Ω
max.
260
100
0.6
3.5
62
2
-
-
-
-
-
Unit
A
V/ns
Unit
K/W
°C
V
µA
nA
Ω
2007-02-06