auirlr120ntrl International Rectifier Corp., auirlr120ntrl Datasheet - Page 2

• Manufacturer Part Number: auirlr120ntrl
• Description: Hexfet Power Mosfet
• Manufacturer: International Rectifier Corp.

AUIRLR120N

‚
V
∆V
R
V
gfs
I
I
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
Static Electrical Characteristics @ T
Dynamic Electrical Characteristics @ T
Diode Characteristics
Notes:
ƒ
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
on
D
S
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
2
Repetitive rating; pulse width limited by
V
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
I
T
SD
DD
For recommended footprint and soldering techniques refer to application note #AN-994
G
J
≤ 175°C
= 25Ω, I
≤ 6.0A, di/dt ≤ 340A/µs, V
= 25V, starting T
/∆T
J
AS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
= 6.0A. (See Figure 12)
Parameter
J
= 25°C, L = 4.7mH
Parameter
Parameter
™
DD
≤ V
(BR)DSS
,
„
…
J
= 25°C (unless otherwise specified)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
J
θ
= 25°C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
100
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–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
3.1
0.12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
440
–––
–––
–––
110
410
4.0
4.5
7.5
23
22
97
50
35
0.185
0.225
0.265
-100
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
160
620
2.0
4.6
1.3
25
20
10
10
35
V/°C
nC
nH
nC
µA
nA
pF
ns
ns
Ω
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
= 6.0A
= 6.0A
= 25°C, I
= 25°C, I
= 11Ω, V
= 8.2Ω, See Fig. 10
= V
= 25V, I
= 100V, V
= 80V, V
= 80V
= 25V
= 0V, I
= 10V, I
= 5.0V, I
= 4.0V, I
= 16V
= -16V
= 5.0V, See Fig. 6 & 13
= 50V
= 0V
GS
, I
Conditions
D
Conditions
Conditions
D
S
F
D
D
GS
= 250µA
D
D
GS
= 250µA
= 6.0A
= 6.0A
= 6.0A, V
= 6.0A
GS
= 6.0A
= 5.0A
= 5.0V,
= 0V, T
f
= 0V
www.irf.com
D
f
f
f
= 1mA
G
GS
J
f
= 150°C
G
= 0V
S
+L
f
D
)
D
S
f
S
D