auirlr120ntrl International Rectifier Corp., auirlr120ntrl Datasheet

auirlr120ntrl

Manufacturer Part Number

auirlr120ntrl

Description

Hexfet Power Mosfet

Manufacturer

International Rectifier Corp.

Datasheet

1.AUIRLR120NTRL.pdf (12 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

AUIRLR120NTRL

Manufacturer:

INFINEON/英飞凌

Quantity:

20 000

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Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

Description

Specifically designed for Automotive applications,

this cellular design of HEXFET® Power MOSFETs

utilizes the latest processing techniques to achieve

low on-resistance per silicon area. This benefit

combined with the fast switching speed and

ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use

in Automotive and a wide variety of other applications.

HEXFET

*Qualification standards can be found at http://www.irf.com/

www.irf.com

• Advanced Planar Technology

• Logic-Level Gate Drive

• Low On-Resistance

• Dynamic dV/dT Rating

• 175ºC Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free, RoHS Compliant

• Automotive Qualified*

dv/dt

Thermal Resistance

STG

θJC

θJA

@ T

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Power Dissipation

is a registered trademark of International Rectifier.

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

Junction-to-Case

Junction-to-Ambient (PCB mount) **

Junction-to-Ambient

) is 25°C, unless otherwise specified.

Parameter

@ 10V

Gate

AUIRLR120N

HEXFET

AUIRLR120N

Typ.

(BR)DSS

DS(on)

–––

Drain

D-Pak

-55 to + 175

Max.

0.32

300

max.

± 16

7.0

6.0

4.8

5.0

Power MOSFET

Max.

110

3.1

PD - 97624

Source

0.185 Ω

100V

10A

Units

W/°C

°C/W

V/ns

°C

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auirlr120ntrl Summary of contents

Page 1

Advanced Planar Technology • Logic-Level Gate Drive • Low On-Resistance • Dynamic dV/dT Rating • 175ºC Operating Temperature • Fast Switching • Fully Avalanche Rated • Repetitive Avalanche Allowed up to Tjmax • Lead-Free, RoHS Compliant • Automotive Qualified* ...

Page 2

AUIRLR120N Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

AUIRLR120N 100 VGS TOP 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2. 2.5V 20µs PULSE WIDTH T = 25°C J 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T ...

Page 5

1MHz iss rss oss 600 iss 400 C oss 200 C rss ...

Page 6

AUIRLR120N 100 125 T , Case Temperature (°C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) ...

Page 7

D.U 10V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig ...

Page 8

AUIRLR120N D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent * for Logic Level Devices GS Fig 14. For N-Channel ...

Page 9

D-Pak Part Marking Information www.irf.com AUIRLR120N 9 ...

Page 10

AUIRLR120N TR 12.1 ( .476 ) FEED DIRECTION 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : ...

Page 11

... Ordering Information Base part Package Type number AUIRLR120N Dpak www.irf.com Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 AUIRLR120N Complete Part Number AUIRLR120N AUIRLR120NTR AUIRLR120NTRL AUIRLR120NTRR 11 ...

Page 12

AUIRLR120N Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product ...

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