ssm3j115tu TOSHIBA Semiconductor CORPORATION, ssm3j115tu Datasheet - Page 2

• Manufacturer Part Number: ssm3j115tu
• Description: Field-effect Transistor Silicon P-channel Mos Type High-speed Switching Applications Power Management Switch Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Switching Time Test Circuit
Marking
Precaution
this product. For normal switching operation, V
voltage than V
Handling Precaution
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
(a) Test circuit
V
(The relationship can be established as follows: V
Take this into consideration when using the device.
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
th
−
can be expressed as the voltage between gate and source when the low operating current value is I
1
2.5V
JJ8
0
V
R
D.U. < = 1%
V
Common Source
Ta = 25°C
3
DD
IN
G
10 μs
th.
: t
= 4.7 Ω
= -10 V
r
, t
f
2
< 5 ns
IN
Equivalent Circuit
R
V
OUT
L
DD
GS (on)
1
GS (off)
3
requires a higher voltage than V
(b) V
(c) V
< V
2
OUT
IN
2
(top view)
th
< V
GS (on).
V
V
DD
DS (ON)
−2.5 V
0 V
)
t
th,
on
10%
and V
t
r
90%
10%
GS (off)
SSM3J115TU
t
90%
off
requires a lower
D
2007-11-01
t
f
= −1 mA for