ssm3j115tu TOSHIBA Semiconductor CORPORATION, ssm3j115tu Datasheet
ssm3j115tu
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ssm3j115tu Summary of contents
Page 1
... − −0 0~−2 4.7 Ω off = 2 DSF SSM3J115TU Unit: mm 2.1±0.1 1.7±0 Gate 2: Source 3: Drain UFM JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.6 mg (typ.) Min Typ. Max Unit −20 ⎯ ...
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... OUT R −2 ( OUT DS (ON (top view requires a higher voltage than V GS (on) < V < (off (on). 2 SSM3J115TU 10% 90% 90% 10 off = −1 mA for D and V requires a lower th, GS (off) ) 2007-11-01 ...
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... Gate–source voltage V 400 300 200 100 Gate –source voltage V 500 Common Source 400 300 -1A / -1.8 V 200 100 0 -4 −50 0 Ambient temperature Ta (°C) 3 SSM3J115TU I – 25°C −25°C -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 ( – (ON -1.0 A Common Source 25° 85°C − ...
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... Total gate charge Q -2 Common Source = 25° 0.2 10 Drain– source voltage V 4 SSM3J115TU |Y | – -100 -1000 -10000 Drain current I (mA - Common Source -1 25° (nC – V ...
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... Cu Pad :25.4mm×25.4mm 10 b:Mounted on FR4 board (25.4mm×25.4mm×1.6mm) Cu Pad :25.4mm×25.4mm c:Mounted on FR4 Board (25.4mm×25.4mm×1.6mm) Cu Pad :0.45mm×0.8mm×3 1 0.001 0.01 0.1 1 Pulse w idth tw (S) 5 SSM3J115TU 10 100 1000 2007-11-01 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM3J115TU 20070701-EN GENERAL 2007-11-01 ...