ssm3k316t TOSHIBA Semiconductor CORPORATION, ssm3k316t Datasheet - Page 4

• Manufacturer Part Number: ssm3k316t
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
0.3
500
300
100
0.1
10
50
30
10
3
1
10
0.01
0.1
8
6
4
2
0
0
Common Source
Ta = 25°C
f = 1 MHz
V GS = 0 V
Drain–source voltage V
Common Source
I D = 3 A
Ta = 25°C
Dynamic Input Characteristic
V DD =15V
Total Gate Charge Qg (nC)
Drain current I
0.1
1
4
|Y
C – V
fs
| – I
V DD =24V
DS
D
D
10
Common Source
V DS = 3 V
Ta = 25°C
DS
1
(A)
8
(V)
C oss
C rss
C iss
100
10
12
4
0.001
1000
0.01
100
0.1
10
10
1
1
0
0.01
Common Source
V GS = 0 V
Ta = 25°C
G
t on
t off
t r
t f
Drain–source voltage V
–0.2
Ta =100 °C
S
D
Drain current I
0.1
–0.4
I
I
DR
DR
t – I
– V
D
−25 °C
DS
–0.6
D
25 °C
DS
1
SSM3K316T
Common Source
V DD = 10 V
V GS = 0 to 2.5 V
Ta = 25°C
R G = 4.7 Ω
(A)
(V)
–0.8
2008-10-20
–1.0
10