ssm3k316t TOSHIBA Semiconductor CORPORATION, ssm3k316t Datasheet

ssm3k316t

Manufacturer Part Number

ssm3k316t

Description

Toshiba Field Effect Transistor Silicon N Channel Mos Type

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.SSM3K316T.pdf (6 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SSM3K316T

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

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Power Management Switch Applications

High-Speed Switching Applications

•

Absolute Maximum Ratings

Electrical Characteristics

1.8-V drive

Low ON-resistance:

Drain–source voltage

Gate–source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Note:

Note 1: The Junction temperature should not exceed 150°C during use.

Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm

Drain–source breakdown voltage

Drain cutoff current

Gate leakage current

Gate threshold voltage

Forward transfer admittance

Drain–source ON-resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Switching time

Drain–source forward voltage

Note3: Pulse test

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristic

Turn-on time

Turn-off time

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

Pulse

= 131 mΩ (max) (@V

= 87 mΩ (max) (@V

= 65 mΩ (max) (@V

= 53 mΩ (max) (@V

(Ta = 25°C)

Symbol

SSM3K316T

(Ta = 25°C)

Symbol

(BR) DSS

(BR) DSX

⏐Y

DS (ON)

DSS

GSS

(Note 2)

DSF

(Note 1)

oss

off

DSS

GSS

rss

iss

stg

t = 10s

⏐

= 1 mA, V

= 3.0 A, V

= 2.0 A, V

= 1.0 A, V

= 0.5 A, V

= − 4.0 A, V

−55 to 150

= 30 V, V

= 3 V, I

= 10 V, V

= 15 V, I

= 10 V, I

= ± 12 V, V

= 4 V

= 0 to 2.5 V, R

Rating

= 1.8 V)

= 2.5 V)

= 4.5 V)

= 10 V)

1250

± 12

700

150

4.0

8.0

Test Condition

= 1 mA

= 2 A

= 2 A,

= 0 V

= –12 V

= 10V

= 4.5 V

= 2.5 V

= 1.8 V

= 3.0 A

= 0 V

= 0 V, f = 1 MHz

= 0 V

= 4.7 Ω

Unit

°C

(Note3)

Weight: 10 mg (typ.)

JEDEC

JEITA

TOSHIBA

Min

0.4

3.8

⎯

)

– 0.9

Typ.

270

7.7

4.3

2.8

1.5

⎯

SSM3K316T

2-3S1A

2008-10-20

―

– 1.2

Max

131

1.0

⎯

±1

⎯

Unit: mm

Unit

mΩ

μA

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ssm3k316t Summary of contents

Page 1

... 2 4.7 Ω off = − 4 DSF SSM3K316T JEDEC ― JEITA ― TOSHIBA 2-3S1A Weight (typ Min Typ. Max ⎯ 30 ⎯ 18 ⎯ ⎯ ⎯ ⎯ ⎯ 0.4 1 ...

... Usage Considerations Let V be the voltage applied between gate and source that causes the drain current (I th SSM3K316T). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...

Page 3

... Gate–source voltage V 200 Common Source Ta = 25°C 150 100 1.0 0.5 Common source −50 150 Ambient temperature Ta (°C) 3 SSM3K316T I – °C − 25 °C 1.0 2.0 ( – (ON) D 1.8 V 2 VGS = ...

Page 4

... Drain–source voltage V 1000 t off C iss 100 oss C rss 100 0. SSM3K316T I – =100 °C 25 °C −25 °C –0.4 –0.6 –0.8 –1.0 ( – Common Source 2 25° ...

Page 5

... Pulse width t (s) w 1000 800 a 600 b 400 200 ) 0 -40 -20 100 1000 Ambient temperature T 5 SSM3K316T P – Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad : 645 Mounted on FR4 board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad : 0.8 mm × ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM3K316T 20070701-EN GENERAL 2008-10-20 ...

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ssm3k316t TOSHIBA Semiconductor CORPORATION, ssm3k316t Datasheet

ssm3k316t

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ssm3k316t Summary of contents

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