ssm6618m Silicon Standard Corporation, ssm6618m Datasheet

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ssm6618m

Manufacturer Part Number
ssm6618m
Description
N-channel Enhancement-mode Power Mosfet
Manufacturer
Silicon Standard Corporation
Datasheet
Rev.2.02 3/21/2004
Low on-resistance
Fast switching speed
Surface-mount package
V
V
I
I
I
P
T
T
Rthj-amb
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
STG
J
DS
GS
D
@ T
@ T
@ T
Symbol
Symbol
A
A
A
=25°C
=70°C
=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Resistance Junction-ambient
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
www.SiliconStandard.com
Parameter
Parameter
1,2
D
3
3
D
SO-8
D
D
S
S
S
G
Max.
-55 to 150
-55 to 150
Rating
BV
I
R
D
G
± 20
0.02
5.8
2.5
25
30
DS(ON)
7
DSS
Value
50
SSM6618M
D
S
30m
Units
W/°C
°CW
25V
Unit
7A
°C
°C
A
V
V
A
W
A
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ssm6618m Summary of contents

Page 1

... Storage Temperature Range STG T Operating Junction Temperature Range J Thermal Data Symbol Rthj-amb Thermal Resistance Junction-ambient Rev.2.02 3/21/2004 N-CHANNEL ENHANCEMENT-MODE POWER MOSFET SO-8 S Parameter 3 3 1,2 Parameter www.SiliconStandard.com SSM6618M 25V BV DSS 30m R DS(ON Rating Units 25 V ± 5 2 ...

Page 2

... =20V DS V =4. =15V DS I = =10V = = =25V DS f=1.0MHz Test Conditions =1. =25°C, I =7A www.SiliconStandard.com SSM6618M Min. Typ. Max. Units =1mA - 0. ±100 - ...

Page 3

... Fig 2. Typical Output Characteristics 2 I =7.0A I =7. =25 ℃ ℃ ℃ ℃ =10V C GS 1.4 0.8 0 -50 Fig 4. Normalized On-Resistance www.SiliconStandard.com SSM6618M 10V o T =150 C C 8.0V 6.0V 5.0V V =4. Drain-to-Source Voltage ( 100 150 Junction Temperature ( C) j vs. Junction Temperature ...

Page 4

... C) Fig 6. Typical Power Dissipation 1 Duty Factor = 0.5 1ms 0.2 0.1 0.1 10ms 0.05 0.02 100ms 0.01 0.01 1s 10s 0.001 0.0001 0.001 10 100 Fig 8. Effective Transient Thermal Impedance www.SiliconStandard.com SSM6618M 50 100 150 o T Case Temperature ( Single Pulse Duty Factor = t/T Peak thja a 0.01 0 ...

Page 5

... Fig 11. Forward Characteristic of Reverse Diode Rev.2.02 3/21/2004 10000 1000 100 Fig 10. Typical Capacitance Characteristics 3 2 Tj=25 C 1.5 1 0.5 0 0.8 1.2 -50 Fig 12. Gate Threshold Voltage vs. www.SiliconStandard.com SSM6618M f=1.0MHz Ciss Coss Crss ( 100 150 Junction Temperature ( Junction Temperature ...

Page 6

... Silicon Standard Corporation or any third parties. Rev.2.02 3/21/2004 THE DS OSCILLOSCOPE 0.6 x RATED Fig 14. Switching Time Waveform THE OSCILLOSCOPE 4.5V 0.8 x RATED Fig 16. Gate Charge Waveform www.SiliconStandard.com SSM6618M d(off) d(on Charge ...

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