ssm6j409tu TOSHIBA Semiconductor CORPORATION, ssm6j409tu Datasheet - Page 3

• Manufacturer Part Number: ssm6j409tu
• Description: Toshiba Field-effect Transistor Silicon P-channel Mos Type U-mos V
• Manufacturer: TOSHIBA Semiconductor CORPORATION

-20
-16
-12
120
100
-8
-4
80
60
40
20
0
80
60
40
20
0
0
0
0
0
Common Source
Ta = 25 °C
V GS = -4.5 V
Drain–source voltage V
Gate–source voltage V
-0.2
-2
-5
VGS = -1.5 V
Drain current I
R
R
-0.4
DS (ON)
-2.5 V
DS (ON)
I
D
-1.8 V
– V
-2.5 V
-4.5 V
-4
-10
DS
– V
-0.6
– I
25 °C
GS
D
D
Common Source
Ta = 25 °C
GS
DS
I D = -0.8 A
Common Source
(A)
-15
-6
-0.8
Ta = 100 °C
(V)
−25 °C
(V)
-1.8 V
-1.5 V
-1
-20
-8
3
-0.0001
-0.001
-0.01
-100
-0.1
-10
120
100
-1
80
60
40
20
50
40
30
20
10
0
60
0
−50
0
0
Common Source
V DS = -3 V
Ta = 100 °C
Common Source
-2.0 A / -2.5 V
Gate–source voltage V
Gate–source voltage V
-1.5 A / -1.8 V
Ambient temperature Ta (°C)
-0.5
-2
0
R
DS (ON)
R
I
−25 °C
D
DS (ON)
25 °C
– V
-1.0
50
I D = -0.8 A / V GS = -1.5 V
-4
GS
– V
– Ta
GS
25 °C
-3.0 A / -4.5 V
GS
GS
-1.5
SSM6J409TU
I D = -3.0A
Common Source
100
-6
(V)
Ta = 100 °C
(V)
−25 °C
2009-04-08
-2.0
150
-8