ssm6j409tu TOSHIBA Semiconductor CORPORATION, ssm6j409tu Datasheet

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ssm6j409tu

Manufacturer Part Number
ssm6j409tu
Description
Toshiba Field-effect Transistor Silicon P-channel Mos Type U-mos V
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Part Number:
ssm6j409tu(TE85LF
Manufacturer:
TOS
Quantity:
3 550
○ Power Management Switch Applications
○ High-Speed Switching Applications
Absolute Maximum Ratings
Marking
Handling Precaution
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
Note 1: The junction temperature should not exceed 150°C during use.
Note 2: Mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm
1.5V drive
Low ON-resistance:
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
6
1
temperature/current/voltage
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
K 11
Characteristic
5
2
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)
Semiconductor
4
3
R
R
R
R
DC
Pulse
on
on
on
on
= 46.2mΩ (max) (@V
= 30.2mΩ (max) (@V
= 22.1mΩ (max) (@V
= 72.3mΩ (max) (@V
SSM6J409TU
I
Reliability
I
DP
D
and
P
(Ta = 25°C)
D
Symbol
V
V
T
T
(Note 1)
(Note 2)
GSS
(Note 1)
DSS
stg
ch
t=10s
the
significant
Equivalent Circuit
Handbook
GS
GS
GS
GS
−55 to 150
= -1.8 V)
= -2.5 V)
= -4.5 V)
= -1.5 V)
Rating
−19.0
−9.5
−20
150
6
1
±8
1
2
1
change
5
2
(“Handling
4
3
Unit
°C
°C
W
V
V
A
in
(top view)
Weight : 7.6mg ( typ.)
JEDEC
JEITA
TOSHIBA
2
)
1,2,5,6 :
3
4
SSM6J409TU
:
:
Drain
Gate
Source
2-2T1D
2009-04-08
Unit: mm

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ssm6j409tu Summary of contents

Page 1

... DP P (Note t=10s 2 °C T 150 ch −55 to 150 °C T stg and the significant change Reliability Handbook (“Handling Equivalent Circuit SSM6J409TU 1,2,5,6 : Drain 3 : Gate 4 : Source ⎯ JEDEC in ⎯ JEITA 2-2T1D TOSHIBA Weight : 7.6mg ( typ (top view) 2009-04-08 Unit: mm ...

Page 2

... 4.7 Ω off = 9 DSF D GS (b) VIN I D OUT ( requires a higher voltage than V GS (on) GS (off) 2 SSM6J409TU Min Typ. Max ⎯ ⎯ -20 ⎯ ⎯ -12 ⎯ ⎯ -10 ⎯ ⎯ ±1 ⎯ -0.3 -1.0 ⎯ (Note ⎯ (Note 3) 17.8 22.1 ⎯ ...

Page 3

... Gate–source voltage V 120 100 Gate–source voltage V 60 Common Source 50 -1 -1 -20 −50 Ambient temperature Ta (°C) 3 SSM6J409TU I – −25 °C 25 °C -1.0 -1.5 -2.0 ( – (ON -3.0A Common Source 25 ° 100 °C −25 ° ...

Page 4

... DS 100 Common Source ° 4.7 Ω 0.001 -1 -10 ( SSM6J409TU |Y | – Common Source °C -0.01 -0.1 -1 -10 Drain current I (A) D Dynamic Input Characteristic - -16 V Common Source -9 ° ...

Page 5

... Cu Pad : 645 0.001 0.01 0 Pulse width t (s) w 2.5 10s 2 1 0.5 0 100 1000 -40 -20 Ambient temperature T 5 SSM6J409TU P – Mounted on FR4 Board (25.4mm × 25.4mm × 1.6mm , 2 Cu Pad : 645 100 120 140 160 (°C) a 2009-04-08 ...

Page 6

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM6J409TU 2009-04-08 ...

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