ssm6n25tu TOSHIBA Semiconductor CORPORATION, ssm6n25tu Datasheet - Page 4

• Manufacturer Part Number: ssm6n25tu
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

*:Total Rating
1000
100
1000
10
10
800
600
400
200
1
0
10
0.1
0
0
Common Source
VGS=0V
f=1MHz
Ta=25°C
t=10s
DC
20
-25°C
Drain-Source voltage VDS (V)
40
Ambient temperature Ta( ℃ )
Drain current ID (mA)
100
25°C
1
C - VDS
60
|Yfs| - ID
Ta=100°C
PD* - Ta
80
mounted FR4 board
(25.4mm*25.4mm*1.6t
Cu Pad :645mm
Common Source
VDS=3V
Ta=25°C
100
1000
10
120
Ciss
Coss
Crss
2
)
140
10000
100
160
4
1000
1600
1400
1200
1000
100
800
600
400
200
10
1
0
10
0
Common Source
VGS=0V
Ta=25°C
G
ton
toff
tf
tr
-0.2
S
D
Drain-Source voltage VDS (V)
IDR
Drain current ID (mA)
100
-0.4
IDR - VDS
t - ID
Common Source
VDD=10V
VGS=0 ~ 2.5V
Ta=25°C
-0.6
SSM6N25TU
1000
2007-11-01
-0.8
10000
-1