ssm6n25tu TOSHIBA Semiconductor CORPORATION, ssm6n25tu Datasheet

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ssm6n25tu

Manufacturer Part Number
ssm6n25tu
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mosiii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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High Speed Switching Applications
Absolute Maximum Ratings
(Q1, Q2 Common)
Marking
Handling Precaution
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
Optimum for high-density mounting in small packages
Low on-resistance:
Drain-Source voltage
Gate-Source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note:
Note 1: Mounted on FR4 board. (total dissipation)
6
1
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
NH
Characteristics
5
2
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
4
3
DC
Pulse
R
R
R
on
on
on
= 395mΩ (max) (@V
= 190mΩ (max) (@V
= 145mΩ (max) (@V
Equivalent Circuit
SSM6N25TU
(Ta = 25°C)
Symbol
(Note 1)
V
6
1
V
T
Q1
I
T
GSS
I
DP
P
DS
stg
D
ch
D
5
2
Q2
GS
GS
GS
4
3
−55~150
= 1.8 V)
= 2.5 V)
= 4.0 V)
Rating
2
± 12
500
150
0.5
1.5
20
1
)
(top view)
Unit
mW
°C
°C
V
V
A
UF6
Weight: 7.0 mg (typ.)
JEDEC
JEITA
TOSHIBA
1.Source1
2.Gate1
3.Drain2
1
2
3
SSM6N25TU
2.1±0.1
1.7±0.1
2-2T1B
4.Source2
5.Gate2
6.Drain1
2007-11-01
Unit: mm
6
5
4

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ssm6n25tu Summary of contents

Page 1

... 500 (Note 1) T 150 ch −55~150 T stg 2 ) Equivalent Circuit (top view SSM6N25TU 2.1±0.1 1.7±0 Unit 1.Source1 4.Source2 2.Gate1 5.Gate2 3.Drain2 6.Drain1 mW °C °C UF6 JEDEC ― JEITA ― TOSHIBA 2-2T1B Weight: 7.0 mg (typ.) 2007-11-01 ...

Page 2

... 0~2 4.7 Ω off ( OUT (c) V OUT V DD requires a higher voltage than V GS (on) < V < (off (on) 2 SSM6N25TU Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 20 ⎯ ⎯ 10 ⎯ ⎯ 1 ⎯ 0.5 1.1 ⎯ (Note2) 1.2 2.4 ⎯ (Note2) 125 145 ⎯ ...

Page 3

... VGS=4V 0 SSM6N25TU ID - VGS Ta=100°C 25°C -25°C Common Source VDS= Gate-Source voltage VGS (V) RDS(ON) - VGS Common Source ID=250mA 25°C Ta=100°C -25° Gate-Source voltage VGS (V) ...

Page 4

... Ciss 100 10 Coss Crss 1 10 100 ) 2 140 160 4 SSM6N25TU IDR - VDS Common Source VGS=0V Ta=25° IDR S -0.2 -0.4 -0.6 -0.8 Drain-Source voltage VDS ( Common Source VDD=10V VGS=0 ~ 2.5V Ta=25°C toff tf ton tr 100 1000 Drain current ID (mA) ...

Page 5

... Single pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1 Pad: 645 mm 100 10 1 0.001 0.01 0.1 Pulse width t r – 100 ( SSM6N25TU 1000 2007-11-01 ...

Page 6

... SSM6N25TU 2007-11-01 ...

Page 7

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 SSM6N25TU 20070701-EN GENERAL 2007-11-01 ...

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