ssm6n25tu TOSHIBA Semiconductor CORPORATION, ssm6n25tu Datasheet
ssm6n25tu
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ssm6n25tu Summary of contents
Page 1
... 500 (Note 1) T 150 ch −55~150 T stg 2 ) Equivalent Circuit (top view SSM6N25TU 2.1±0.1 1.7±0 Unit 1.Source1 4.Source2 2.Gate1 5.Gate2 3.Drain2 6.Drain1 mW °C °C UF6 JEDEC ― JEITA ― TOSHIBA 2-2T1B Weight: 7.0 mg (typ.) 2007-11-01 ...
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... 0~2 4.7 Ω off ( OUT (c) V OUT V DD requires a higher voltage than V GS (on) < V < (off (on) 2 SSM6N25TU Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 20 ⎯ ⎯ 10 ⎯ ⎯ 1 ⎯ 0.5 1.1 ⎯ (Note2) 1.2 2.4 ⎯ (Note2) 125 145 ⎯ ...
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... VGS=4V 0 SSM6N25TU ID - VGS Ta=100°C 25°C -25°C Common Source VDS= Gate-Source voltage VGS (V) RDS(ON) - VGS Common Source ID=250mA 25°C Ta=100°C -25° Gate-Source voltage VGS (V) ...
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... Ciss 100 10 Coss Crss 1 10 100 ) 2 140 160 4 SSM6N25TU IDR - VDS Common Source VGS=0V Ta=25° IDR S -0.2 -0.4 -0.6 -0.8 Drain-Source voltage VDS ( Common Source VDD=10V VGS=0 ~ 2.5V Ta=25°C toff tf ton tr 100 1000 Drain current ID (mA) ...
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... Single pulse Mounted on FR4 board (25.4 mm × 25.4 mm × 1 Pad: 645 mm 100 10 1 0.001 0.01 0.1 Pulse width t r – 100 ( SSM6N25TU 1000 2007-11-01 ...
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... SSM6N25TU 2007-11-01 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 SSM6N25TU 20070701-EN GENERAL 2007-11-01 ...