ssm6n37fu TOSHIBA Semiconductor CORPORATION, ssm6n37fu Datasheet - Page 2

• Manufacturer Part Number: ssm6n37fu
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics (Ta = 25°C)
Switching Time Test Circuit
Precaution
SSM6N37FU). Then, for normal switching operation, V
V
Handling Precaution
protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that
come into direct contact with devices should be made of antistatic materials.
and pad area. When using this device, please take heat dissipation into consideration
th.
Let V
Take this into consideration when using the device.
When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is
Thermal resistance R
Drain-source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Drain-Source forward voltage
Note2: Pulse test
This relationship can be expressed as: V
2.5 V
(a) Test Circuit
0 V
th
be the voltage applied between gate and source that causes the drain current (I
10 μs
Characteristics
IN
Turn-on time
Turn-off time
th (ch-a)
and power dissipation P
V
DD
OUT
V
V
R
V
R
Duty ≤ 1%
V
Common source
Ta = 25°C
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DD
IN
GS(off)
V
G
I
I
C
|Y
C
C
GSS
DSS
V
t
t
DSF
oss
on
off
= 50Ω
rss
iss
: t
th
fs
= 10 V
|
r
, t
f
< V
< 5 ns
(Q1, Q2 Common)
I
I
V
V
V
V
I
I
I
I
V
V
V
I
D
GS(on)
th
D
D
D
D
D
D
D
DS
GS
DS
DS
DS
DD
GS
vary depending on board material, board area, board thickness
= 1 mA, V
= 1 mA, V
= 100 mA, V
= 50 mA, V
= 20 mA, V
= 10 mA, V
= -250 mA, V
< V
= 20 V, V
= 3 V, I
= 3 V, I
= 10 V, V
= ±10 V, V
= 10 V, I
= 0 to 2.5 V, R
2
GS(on).
must be higher than V
(b) V
(c) V
Test Condition
D
D
GS
GS
D
GS
GS
GS
GS
= 1 mA
= 100 mA
GS
GS
DS
= 100 mA
GS
IN
OUT
= 0 V
= -10 V
= 2.5 V
= 1.8 V
= 1.5 V
= 0 V
= 0 V, f = 1 MHz
= 4.5 V (Note2)
= 0 V
= 0 V
G
= 50 Ω
2.5 V
0 V
V
V
(Note2)
(Note2)
(Note2)
(Note2)
(Note2)
DD
DS (ON)
th,
and V
0.35
0.14
Min
20
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
t
on
10%
D
GS(off)
) to be low (1mA for the
t
r
10%
90%
Typ.
0.28
1.65
2.16
2.66
3.07
-0.9
5.5
4.1
SSM6N37FU
12
18
36
⎯
⎯
⎯
⎯
⎯
must be lower than
90%
t
off
2010-08-31
Max
2.20
3.02
4.05
5.60
-1.2
1.0
⎯
⎯
±1
⎯
⎯
⎯
⎯
⎯
⎯
t
1
f
Unit
μA
μA
pF
ns
V
V
S
Ω
V