ssm6n37fu TOSHIBA Semiconductor CORPORATION, ssm6n37fu Datasheet
ssm6n37fu
Related parts for ssm6n37fu
ssm6n37fu Summary of contents
Page 1
... Rating Unit V 20 DSS ± GSS I 250 500 DP P (Note1) 300 mW D °C T 150 ch −55 to 150 °C T stg 2 × 6) Equivalent Circuit (top view SSM6N37FU V V JEDEC JEITA TOSHIBA 2-2J1C Weight: 6.8 mg(typ.) 2010-08-31 Unit: mm ― ― ...
Page 2
... V DD Precaution Let V be the voltage applied between gate and source that causes the drain current (I th SSM6N37FU). Then, for normal switching operation This relationship can be expressed as: V th. Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge ...
Page 3
... Pulse test ° 100 °C 2 − 25 ° (V) GS 1.0 0.5 100m −50 100 150 3 SSM6N37FU I – 100 °C − 25 °C 25 °C Common Source Pulse test 1.0 2.0 Gate-source voltage V ( – (ON) D 1.5 V 1.8 V 2.5V VGS = 4.5Ｖ ...
Page 4
... Ta =100 °C 1 0.1 1000 0 Drain-source voltage V 1000 t off t f 100 100 1 (V) 2 × 6) 120 160 4 SSM6N37FU I – Common Source Pulse test −25 °C S –0.5 –1.0 –1.5 ( – Common Source 2 ° ...
Page 5
... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 5 SSM6N37FU 2010-08-31 ...