bsp110-03 NXP Semiconductors, bsp110-03 Datasheet
bsp110-03
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bsp110-03 Summary of contents
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... BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: BSP110 in SOT223. 2. Features TrenchMOS™ technology Very fast switching Logic level compatible Surface mount package. 3. Applications Relay driver ...
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... Figure pulsed Figure Figure pulsed Rev. 03 — 26 July 2000 BSP110 Typ Max Unit 100 V 520 mA 6.25 W 150 Min Max Unit 100 V 100 520 ...
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... der Fig 2. Normalized continuous drain current as a function of solder point temperature. R DSon = D. Rev. 03 — 26 July 2000 BSP110 03aa25 120 100 100 125 150 ------------------ - ...
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... Z th(j-sp) (K/W) = 0.5 10 0.2 0.1 0.05 0.02 1 single pulse Mounted on a metal clad substrate. pulse duration. Rev. 03 — 26 July 2000 BSP110 Value Unit 20 K/W 150 K/W 03aa58 (s) © Philips Electronics N.V. 2000. All rights reserved. ...
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... 300 mA Figure 300 mA /dt = 100 Rev. 03 — 26 July 2000 BSP110 Typ Max Unit 130 3.5 V 0.01 1 100 350 ...
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... Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03aa64 10V 0.3 0 --------------------------- - R Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 03 — 26 July 2000 BSP110 03aa65 0 > DSon (A) 0.6 0 0.4 150 o C 0.3 0.2 0 ...
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... C iss , C oss , rss (pF) 150 o C 0.5 0 MHz DSon GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 03 — 26 July 2000 BSP110 03aa37 ( min typ 0 ...
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... Product specification N-channel enhancement mode field-effect transistor 0 (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.2 0 and 150 voltage; typical values. Rev. 03 — 26 July 2000 BSP110 03aa67 150 0.6 0.8 1 1.2 1 (V) © Philips Electronics N.V. 2000. All rights reserved ...
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... scale 6.7 3.7 7.3 1.1 4.6 2.3 6.3 3.3 6.7 0.7 REFERENCES JEDEC EIAJ SC-73 Rev. 03 — 26 July 2000 BSP110 detail 0.95 0.2 0.1 0.1 0.85 EUROPEAN ISSUE DATE PROJECTION 97-02-28 99-09-13 © Philips Electronics N.V. 2000. All rights reserved. SOT223 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 03 20000726 HZG303 Product specification; third version; supersedes BSP110_CNV_2 of 970623. Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove). 02 19970623 - Product specification; second version. 01 19901031 - Product specification; initial version. ...
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... Rev. 03 — 26 July 2000 BSP110 Philips Semiconductors assumes no © Philips Electronics N.V. 2000 All rights reserved. ...
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... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA70) Rev. 03 — 26 July 2000 BSP110 © Philips Electronics N.V. 2000. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 July 2000 Document order number: 9397 750 07256 N-channel enhancement mode field-effect transistor Printed in The Netherlands BSP110 ...