BSP110,115 NXP Semiconductors, BSP110,115 Datasheet

MOSFET N-CH 100V 520MA SOT223

BSP110,115

Manufacturer Part Number
BSP110,115
Description
MOSFET N-CH 100V 520MA SOT223
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BSP110115.pdf (13 pages)

Specifications of BSP110,115

Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 Ohm @ 150mA, 5V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
520mA
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
40pF @ 10V
Power - Max
6.25W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Drain
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
10 Ohm @ 5 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.52 A
Power Dissipation
6250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge (qg) @ Vgs
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934000600115
BSP110 T/R
BSP110 T/R
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
1.
Pin
1
2
3
4
TrenchMOS is a trademark of Royal Philips Electronics.
Pinning - SOT223, simplified outline and symbol
Description
gate (g)
drain (d)
source (s)
drain (d)
c
c
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
Product availability:
BSP110 in SOT223.
BSP110
N-channel enhancement mode field-effect transistor
Rev. 03 — 26 July 2000
TrenchMOS™ technology
Very fast switching
Logic level compatible
Surface mount package.
Relay driver
High speed line driver
Logic level translator.
1
technology.
Simplified outline
1
4
SOT223
2
3
03ab45
Symbol
N-channel MOSFET
g
Product specification
d
s
03ab30

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BSP110,115 Summary of contents

Page 1

BSP110 N-channel enhancement mode field-effect transistor Rev. 03 — 26 July 2000 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: BSP110 in SOT223. 2. Features TrenchMOS™ technology Very fast switching Logic level compatible ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P der (%) 100 100 P tot P = ---------------------- 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to solder th(j-sp) point R thermal resistance from junction to ambient th(j-a) 7.1 Transient thermal impedance Fig 4. Transient thermal impedance from junction to ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...

Page 6

Philips Semiconductors 0 0.45 (A) 0.4 0.35 0.3 0.25 0.2 0.15 0.1 0. 0.2 0.4 0.6 0 Fig 5. Output characteristics: drain current as ...

Page 7

Philips Semiconductors 3 V GS(th) (V) 2.5 typ 2 1.5 min 1 0.5 0 - Fig 9. Gate-source threshold voltage as a function of junction temperature. 0.5 ...

Page 8

Philips Semiconductors T Fig 13. Source (diode forward) current as a function of source-drain (diode forward) 9397 750 07256 Product specification N-channel enhancement mode field-effect transistor 0 (A) 0.8 0.7 0.6 0.5 ...

Page 9

Philips Semiconductors 9. Package outline Plastic surface mounted package; collector pad for good heat transfer; 4 leads DIMENSIONS (mm are the original dimensions) UNIT 1.8 ...

Page 10

Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 03 20000726 HZG303 Product specification; third version; supersedes BSP110_CNV_2 of 970623. Converted from VDMOS (Nijmegen) to TrenchMOS™ technology (Hazel Grove). 02 19970623 - Product specification; second version. ...

Page 11

Philips Semiconductors 11. Data sheet status Datasheet status Product status Definition Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data ...

Page 12

Philips Semiconductors Philips Semiconductors - a worldwide company Argentina: see South America Australia: Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Tel. +43 160 101, Fax. +43 160 101 1210 Belarus: Tel. +375 17 220 0733, Fax. ...

Page 13

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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