si7964dp-t1 Vishay, si7964dp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7964dp-t1
• Description: Dual N-channel 60-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 73101
S-42058—Rev. B, 15-Nov-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
0.025
0.020
0.015
0.010
0.005
0.000
10
40
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
5
= 9.6 A
On-Resistance vs. Drain Current
= 30 V
0.3
10
V
SD
10
Q
T
g
J
− Source-to-Drain Voltage (V)
I
D
− Total Gate Charge (nC)
= 150_C
V
15
− Drain Current (A)
Gate Charge
GS
0.6
20
= 10 V
20
0.9
30
25
T
30
J
= 25_C
1.2
40
35
1.5
40
50
New Product
4000
3200
2400
1600
0.05
0.04
0.03
0.02
0.01
0.00
800
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
GS
= 9.6 A
10
= 10 V
C
2
oss
T
V
V
0
J
DS
GS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
20
− Drain-to-Source Voltage (V)
25
Capacitance
4
C
Vishay Siliconix
C
iss
50
30
rss
6
75
40
I
Si7964DP
D
= 9.6 A
100
www.vishay.com
8
50
125
150
10
60
3