si7964dp-t1 Vishay, si7964dp-t1 Datasheet

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si7964dp-t1

Manufacturer Part Number
si7964dp-t1
Description
Dual N-channel 60-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
si7964dp-t1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si7964dp-t1-GE3
Manufacturer:
MAXIM
Quantity:
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Part Number:
si7964dp-t1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes
a.
Document Number: 73101
S-42058—Rev. B, 15-Nov-04
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
60
(V)
J
8
D1
6.15 mm
ti
Ordering Information: Si7964DP-T1—E3
7
D1
t A bi
0.023 @ V
PowerPAK SO-8
r
6
DS(on)
D2
Bottom View
5
J
J
a
a
= 150_C)
= 150_C)
t
a
a
D2
GS
Parameter
Parameter
(W)
= 10 V
Dual N-Channel 60-V (D-S) MOSFET
1
a
a
S1
2
G1
a
3
I
S2
D
9.6
5.15 mm
(A)
4
G2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
Q
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
g
New Product
= 25_C
= 70_C
= 25_C
= 70_C
(Typ)
43
Symbol
Symbol
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr Package
D Dual MOSFET for Space Savings
D 100% R
D High Threshold Voltage At High Temperature
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
I
AS
thJA
DS
GS
D
D
S
AS
G
D
D
stg
1
N-Channel MOSFET
g
Tested
D
S
10 secs
Typical
1
1
9.6
7.7
2.9
3.5
2.2
2.2
26
60
−55 to 150
G
2
"20
60
40
25
31
N-Channel MOSFET
Steady State
Maximum
Vishay Siliconix
6.1
4.9
1.2
1.4
0.9
2.7
D
S
35
85
2
2
Si7964DP
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
1

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si7964dp-t1 Summary of contents

Page 1

... PowerPAK SO Bottom View Ordering Information: Si7964DP-T1—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) Single Avalanche Current ...

Page 2

... Si7964DP Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...

Page 3

... Document Number: 73101 S-42058—Rev. B, 15-Nov-04 New Product 4000 3200 2400 1600 800 1.8 1.6 1.4 1.2 1.0 0.8 0 0.05 0. 25_C J 0.03 0.02 0.01 0.00 1.2 1.5 Si7964DP Vishay Siliconix Capacitance C iss C rss C oss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 9 −50 − 100 T − ...

Page 4

... Si7964DP Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.8 0 250 mA D −0.0 −0.4 −0.8 −1.2 −1.6 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − www.vishay.com 4 New Product ...

Page 5

... Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73101. Document Number: 73101 S-42058—Rev. B, 15-Nov-04 New Product −3 −2 10 Square Wave Pulse Duration (sec) Si7964DP Vishay Siliconix − www.vishay.com 5 ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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