zxmhc3a01t8 Zetex Semiconductors plc., zxmhc3a01t8 Datasheet - Page 4

• Manufacturer Part Number: zxmhc3a01t8
• Description: Complementary 30v Enhancement Mode Mosfet H-bridge
• Manufacturer: Zetex Semiconductors plc.

N-channel
ELECTRICAL CHARACTERISTICS (at T
NOTES
(1) Measured under pulsed conditions. Pulse width
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMHC3A01T8
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
Forward transconductance
DYNAMIC
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
SOURCE-DRAIN DIODE
Diode forward voltage
Reverse recovery time
Reverse recovery charge
S E M I C O N D U C T O R S
(3)
(1)
(2) (3)
(1)
(3)
(3)
(1) (3)
300 s; duty cycle
SYMBOL
V
I
I
V
R
g
C
C
C
t
t
t
t
Q
Q
Q
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
amb
(BR)DSS
GS(th)
DS(on)
fs
iss
oss
rss
SD
g
gs
gd
rr
= 25°C unless otherwise stated)
4
2%.
MIN.
1.0
30
TYP.
17.7
13.0
190
3.5
1.7
2.3
6.6
2.9
3.9
0.6
0.9
38
20
MAX. UNIT CONDITIONS
0.12
0.18
0.95
100
1.0
3.0
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
V
A
DRAFT ISSUE E - APRIL 2004
I
V
V
I
V
V
V
V
f=1MHz
V
R
V
I
T
V
T
di/dt=100A/ s
D
D
D
j
j
DS
GS
GS
GS
DS
DS
DD
G
DS
GS
= 250 A, V
= 250 A, V
= 2.5A
=25°C, I
=25°C, I
≅ 6.0Ω, V
=30V, V
=4.5V, I
= 25V, V
= 15V, V
=±20V, V
= 10V, I
= 4.5V, I
= 15V, I
=0V
S
S
= 1.7A,
= 2.5A,
D
GS
D
D
D
GS
GS
GS
= 2.5A
= 2.5A
= 2.5A
DS
GS
DS
= 2.0A
=0V
=0V
= 10V
= 10V
=0V
=V
=0V
GS