zxmhc3a01t8 Zetex Semiconductors plc., zxmhc3a01t8 Datasheet
zxmhc3a01t8
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zxmhc3a01t8 Summary of contents
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... SIZE WIDTH ZXMHC3A01T8TA 7” 12mm ZXMHC3A01T8TC 13” 12mm DEVICE MARKING • ZXMH C3A01 DRAFT ISSUE E - APRIL 2004 = 0. 3.1A DS(on 0. -2.3A DS(on) D QUANTITY PER REEL 1,000 units 4,000 units 1 ZXMHC3A01T8 SM8 PINOUT ...
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... ZXMHC3A01T8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (V = 10V 10V 10V (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) (a) (d) Power dissipation at T =25°C A Linear derating factor (b) (d) Power dissipation at T =25° ...
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... DRAFT ISSUE E - APRIL 2004 ZXMHC3A01T8 CHARACTERISTICS ...
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... ZXMHC3A01T8 N-channel ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (1) resistance (1) (3) Forward transconductance (3) DYNAMIC Input capacitance Output capacitance Reverse transfer capacitance (2) (3) SWITCHING Turn-on-delay time Rise time ...
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... N-channel DRAFT ISSUE E - APRIL 2004 TYPICAL CHARACTERISTICS 5 ZXMHC3A01T8 ...
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... ZXMHC3A01T8 N-channel TYPICAL CHARACTERISTICS 6 DRAFT ISSUE E - APRIL 2004 ...
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... C 25.8 rss t 1.2 d(on 12.1 d(off) t 7.5 f 2 -0.85 -0. 300 s; duty cycle 2%. 7 ZXMHC3A01T8 -250 -30V =±20V -250 -10V -1. -4.5V -1. -15V ...
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... ZXMHC3A01T8 P-channel TYPICAL CHARACTERISTICS 8 DRAFT ISSUE E - APRIL 2004 ...
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... P-channel DRAFT ISSUE E - APRIL 2004 TYPICAL CHARACTERISTICS 9 ZXMHC3A01T8 ...
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... ZXMHC3A01T8 PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Typ. Min Max 0.067 A1 0.02 0.1 - 0.008 0.004 0 0.24 0.32 - 0.009 0.013 D 6.3 6.7 - 0.248 0.264 E 3.3 3.7 - 0.130 0.145 © Zetex Semiconductors plc 2004 Europe Americas Zetex GmbH Zetex Inc Streitfeldstraß ...