l99dz80ep STMicroelectronics, l99dz80ep Datasheet - Page 33

• Manufacturer Part Number: l99dz80ep
• Description: Door Actuator Driver
• Manufacturer: STMicroelectronics

L99DZ80EP
3.6
3.7
3.8
pump is disabled and the H-Bridge gate drivers are switched into sink condition to protect
the H-bridge and the load. When the voltage V
V
avoid the operation of the power devices without sufficient gate driving voltage (increased
power dissipation). If the supply voltage V
pump is switched on again, the CP_LOW bit is cleared and the output stages return to the
programmed state. If the undervoltage/overvoltage recovery disable bit is set, the automatic
turn-on of the drivers is deactivated.
If the undervoltage/overvoltage recovery disable bit (OV_UV_RD) is set, the microcontroller
needs to clear the status bits to reactivate the drivers. It is recommended to set OV_UV_RD
bit to avoid a possible high current oscillation in case of a shorted output to GND and low
battery voltage.
Overvoltage and undervoltage detection at V
At power-on (V
internally generated power-on-reset (POR). If the voltage V
threshold (V
registers are cleared. If the voltage at pin V
V
registers are cleared. After the voltage at pin V
device enters normal operating mode again and the internal registers are reset.
Temperature warning and shutdown
If the junction temperature rises above the temperature warning threshold (T
temperature warning flag is set after the temperature warning filter time (T
read via SPI. If the junction temperature increases above the temperature shutdown
threshold (T
stages are switched off to protect the device after the thermal shutdown filter time. The
gates of the H-Bridge are discharged by the ‘Resistive Low’ mode.
The temperature warning and thermal shutdown flags are latched and must be cleared by
the microcontroller. This is done by a read and clear command on an arbitrary register,
because both bits are part of the global status register.
After these bits have been cleared, the output stages are reactivated. If the temperature is
still above the thermal warning threshold, the thermal warning bit is set after T
bit is set and the temperature is above the temperature shutdown threshold, temperature
shutdown is detected after T
after which the outputs are switched off after the bits have been cleared in case the
temperature is still above the thermo-shutdown threshold is twice the thermo-warning/-
shutdown filter time T
Inductive loads
Each half bridge is built by internally connected high- and low-side power DMOS transistors.
Due to the built-in reverse diodes of the output transistors, inductive loads can be driven at
the outputs OUT1 to OUT6 without external freewheeling diodes. The high-side drivers
OUT7 to OUT11 are intended to drive resistive loads. Therefore only a limited energy
SUV_OFF
VCCRESHU
(UV-switch-OFF voltage), the output stages are switched to high impedance to
, the device enters the reset state, all outputs are switched off and all internal
jTS
PORON
), the thermal shutdown bit is set and the power transistors of all output
CC
increases from undervoltage to V
), the outputs are switched to 3-state (high impedance) and the status
jtft
.
jtft
Doc ID 18260 Rev 4
and the outputs are switched off. Therefore the minimum time
S
CC
recovers to normal operating voltage, the charge
increases above the V
S
CC
drops below the undervoltage threshold
has decreased below V
POROFF
) the circuit is initialized by an
CC
decreases below the low
Application information
CC
CC
reset high threshold
VCCRESHL
jtft
) and can be
jTW
jtft
), a
. Once this
, the
33/68