ap1203gmt-hf APEC, ap1203gmt-hf Datasheet

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ap1203gmt-hf

Manufacturer Part Number
ap1203gmt-hf
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
APEC
Datasheet
▼ Simple Drive Requirement
▼ SO-8 Compatible
▼ Fast Switching Performance
▼ RoHS Compliant & Halogen-Free
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The PMPAK 5x6 package is special for DC-DC converters application
and the foot print is compatible with SO-8 with backside heat sink.
V
V
I
I
I
I
P
P
E
T
T
Rthj-c
Rthj-a
Data & specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
D
DM
STG
J
DS
GS
D
D
AS
@T
@T
@T
@T
@T
C
A
A
Symbol
Symbol
C
A
=25℃
=70℃
=25℃
=25℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Total Power Dissipation
Single Pulse Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
1
3
3
4
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
S
3
Halogen-Free Product
-55 to 150
-55 to 150
S
Rating
BV
R
I
S
D
36.7
+20
180
AP1203GMT-HF
30
45
16
13
29
DS(ON)
S
5
DSS
G
Value
3.4
25
PMPAK 5x6
D
D
12mΩ
200905216
D
Units
Units
℃/W
℃/W
30V
45A
mJ
W
W
D
V
V
A
A
A
A
1

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ap1203gmt-hf Summary of contents

Page 1

... Thermal Data Symbol Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET Parameter Parameter 3 AP1203GMT-HF Halogen-Free Product BV 30V DSS R 12mΩ DS(ON) I 45A □ ...

Page 2

... AP1203GMT-HF Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t Turn-on Delay Time ...

Page 3

... V Fig 2. Typical Output Characteristics 2.0 I =20A D V =10V G 1.6 1.2 0.8 0.4 -50 10 Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 C 1.2 0.8 0.4 1.6 -50 Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP1203GMT-HF o 10V T =150 .0V 5.0V 4 =3.0V G 2.0 4.0 6.0 8.0 , Drain-to-Source Voltage ( 100 150 Junction Temperature ( 100 ...

Page 4

AP1203GM- =10A =16V =20V DS V =24V Total Gate Charge (nC) G Fig 7. Gate Charge Characteristics 1000 100 10 o ...

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