ap4920gm APEC, ap4920gm Datasheet

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ap4920gm

Manufacturer Part Number
ap4920gm
Description
N-channel Enhancement Mode Power Mosfet
Manufacturer
APEC
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AP4920GM
Manufacturer:
APEC/富鼎
Quantity:
20 000
Part Number:
ap4920gm-HF
Manufacturer:
APEC/富鼎
Quantity:
20 000
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching
V
V
I
I
I
P
T
T
Rthj-amb
Data and specifications subject to change without notice
Description
Absolute Maximum Ratings
Thermal Data
D
D
DM
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
STG
J
DS
GS
D
@T
@T
@T
A
A
Symbol
Symbol
A
=25℃
=70℃
=25℃
Advanced Power
Electronics Corp.
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Maximum Thermal Resistance, Junction-ambient
Parameter
Parameter
D1
1
D1
SO-8
3
3
D2
D2
S1
G1
S2
G2
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
3
RoHS-compliant Product
G1
-55 to 150
-55 to 150
Rating
BV
R
I
0.016
D
+20
5.7
25
20
DS(ON)
7
2
DSS
Value
62.5
D1
S1
AP4920GM
G2
200807212
25mΩ
Units
W/℃
℃/W
25V
Unit
7A
W
V
V
A
A
A
D2
S2
1

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ap4920gm Summary of contents

Page 1

... J Thermal Data Symbol Rthj-amb Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice N-CHANNEL ENHANCEMENT MODE POWER MOSFET SO Parameter 3 AP4920GM RoHS-compliant Product BV 25V DSS R 25mΩ DS(ON Rating Units 25 + 0.016 W/℃ ...

Page 2

... AP4920GM Electrical Characteristics@T Symbol Parameter BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temperature Coefficient ΔBV /ΔT DSS j R Static Drain-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-Source Leakage Current DSS Drain-Source Leakage Current (T I Gate-Source Leakage GSS Q Total Gate Charge g Q Gate-Source Charge ...

Page 3

... Fig 2. Typical Output Characteristics 1 =10 1.6 GS ℃ 1.4 1.2 1.0 0.8 0 -50 Fig 4. Normalized On-Resistance AP4920GM o T =150 C 10V A 8.0V 6. Drain-to-Source Voltage ( 100 Junction Temperature ( C) j v.s. Junction Temperature 7 150 ...

Page 4

... AP4920GM Case Temperature ( c Fig 5. Maximum Drain Current v.s. Case Temperature 100 Single Pulse 0.01 0 (V) DS Fig 7. Maximum Safe Operating Area 100 125 150 1ms 0.1 10ms 100ms 1s 0.01 10s DC 0.001 10 100 0.0001 Fig 8 ...

Page 5

... Fig 11. Forward Characteristic of Reverse Diode 10000 1000 100 Fig 10. Typical Capacitance Characteristics 3 2 =25 C 1.5 1 0.5 0 1.1 1.3 1.5 -50 Fig 12. Gate Threshold Voltage v.s. AP4920GM f=1.0MHz Ciss Coss Crss ( 100 o T ,Junction Temperature ( C) j Junction Temperature 29 150 5 ...

Page 6

... AP4920GM 10V - Fig 13. Switching Time Circuit Fig 15. Gate Charge Circuit THE DS OSCILLOSCOPE 0.6x RATED Fig 14. Switching Time Waveform THE OSCILLOSCOPE 4.5V 0.6 x RATED V DS Fig 16. Gate Charge Waveform ...

Page 7

ADVANCED POWER ELECTRONICS CORP. Package Outline : SO Part Marking Information & Packing : SO-8 4920GM YWWSSS 1.All Dimension Are In Millimeters. 2.Dimension Does ...

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