m29f040 STMicroelectronics, m29f040 Datasheet

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m29f040

Manufacturer Part Number
m29f040
Description
4 Mbit 512kb X8, Uniform Block Single Supply Flash Memory
Manufacturer
STMicroelectronics
Datasheet

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Table 1. Signal Names
November 1999
This is information on a product still in production but not recommended for new designs.
A0-A18
DQ0-DQ7
E
G
W
V
V
M29F040 is replaced by the M29F040B
5V
ERASE and READ OPERATIONS
FAST ACCESS TIME: 70ns
BYTE PROGRAMMING TIME: 10 s typical
ERASE TIME
– Block: 1.0 sec typical
– Chip: 2.5 sec typical
PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Data Polling and Toggle bits Protocol for
MEMORY ERASE in BLOCKS
– 8 Uniform Blocks of 64 KBytes each
– Block Protection
– Multiblock Erase
ERASE SUSPEND and RESUME MODES
LOW POWER CONSUMPTION
– Read mode: 8mA typical (at 12MHz)
– Stand-by mode: 25 A typical
– Automatic Stand-by mode
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E2h
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory
CC
SS
P/E.C. Status
10% SUPPLY VOLTAGE for PROGRAM,
Address Inputs
Data Input / Outputs
Chip Enable
Output Enable
Write Enable
Supply Voltage
Ground
Figure 1. Logic Diagram
A0-A18
PLCC32 (K)
W
G
E
19
V CC
V SS
M29F040
NOT FOR NEW DESIGN
M29F040
TSOP32 (N)
8 x 20 mm
8
DQ0-DQ7
AI01372
1/31

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m29f040 Summary of contents

Page 1

... Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory M29F040 is replaced by the M29F040B 5V 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME typical ERASE TIME – Block: 1.0 sec typical – Chip: 2.5 sec typical PROGRAM/ERASE CONTROLLER (P/E.C.) – ...

Page 2

... A12 DQ7 AI01378 DESCRIPTION The M29F040 is a non-volatile memory that may be erased electrically at the block level, and pro- grammed Byte-by-Byte. The interface is directly compatible with most mi- A11 32 croprocessors. PLCC32 and TSOP32 (8 x 20mm) A9 packages are available. Both normal and reverse A8 pin outs are available for the TSOP32 package ...

Page 3

... Data Polling, Toggle and Error data may be read at any time, including during the program- ming or erase cycles, to monitor the progress of the operation. When power is first applied falls below V LKO Read Array. M29F040 Value Unit –40 to 125 C –50 to 125 C –65 to 150 C – ...

Page 4

... M29F040 Table 3. Operations Operation E Read V IL Write V IL Output Disable V IL Standby V IH Note Table 4. Electronic Signature Code E G Manufact. Code Device Code Table 5. Block Protection Status Code E G Protected Block Unprotected Block ...

Page 5

... Manufacturer code (20h). Address bits and A16, A17, A18 within the uniform block to be checked, will output the Block Protection IH M29F040 7th Cyc. Address Read Data Polling or Toggle Bit until Program completes. Program Data ...

Page 6

... M29F040 Memory Blocks The memory blocks of the M29F040 are shown in Figure 3. The memory array is divided in 8 uniform blocks of 64 Kbytes. Each block can be erased separately or any combination of blocks can be erased simultaneously. The Block Erase operation is managed automatically by the P/E.C. The opera- tion can be suspended in order to read from any other block, and then resumed ...

Page 7

... Any read attempt during Program or Erase com- mand execution will automatically output those four bits. The P/E.C. automatically sets bits DQ3, DQ5, DQ6 and DQ7. Other bits (DQ0, DQ1, DQ2 and DQ4) are reserved for future use and should be masked. M29F040 TOP BOTTOM ADDRESS ADDRESS 7FFFFh ...

Page 8

... M29F040 Table 8. Status Register DQ Name Logic Level ’1’ Data ’0’ 7 Polling DQ DQ ’-1-0-1-0-1-0-1-’ ’-0-0-0-0-0-0-0-’ 6 Toggle Bit ’-1-1-1-1-1-1-1-’ ’1’ 5 Error Bit ’0’ ’1’ 4 ’0’ ’1’ Erase 3 Time Bit ’0’ 2 Reserved 1 Reserved ...

Page 9

... Block Protection status depending on the levels of A0, A1, A6, A16, A17 and A18. The manufacturer code, 20h, is output when the ad- dresses lines A0, A1 and A6 are Low, the device code, E2h is output when A0 is High with A1 and A6 Low. M29F040 Standard 10ns 0.45V to 2.4V 0.8V and 2V 1.3V 1N914 3 ...

Page 10

... M29F040 Table 11. DC Characteristics ( – – –40 to 125 Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current (Standby) TTL CC2 I Supply Current (Standby) CMOS CC3 I Supply Current (Program or Erase) ...

Page 11

... DQ5 returns ’1’ if there has been an Erase Failure because erasure has not completed even after the maximum number of erase cycles have been executed. In this case, it will be necessary to input a Reset (RST) to the command interface in order to reset the P/E.C. M29F040 M29F040 -70 -90 Unit ...

Page 12

... Bit will stop toggling between 0.1 s and 15 s after the Erase Suspend (ES) command has been writ- ten. The M29F040 will then automatically set to Read Memory Array mode. When erase is suspended, Read from blocks being erased will output invalid data, Read from block not being erased is valid. ...

Page 13

... Figure 6. Read Mode AC Waveforms M29F040 13/31 ...

Page 14

... V CC Supply Rails Normal precautions must be taken for supply volt- age decoupling, each device in a system should have the V CC close to the V widths should be sufficient to carry the V IH gram and erase currents required. M29F040 -70 -90 Unit 10 10% CC Standard Interface ...

Page 15

... Note: 1. Time is measured to Data Polling or Toggle Bit, t Parameter Standard Interface Min 120 1 WHQV WHQ7V Q7VQV M29F040 M29F040 -120 -150 Unit 10 10% CC Standard Interface Max Min Max 150 1.0 ...

Page 16

... M29F040 Figure 7. Write AC Waveforms, W Controlled A0-A18 tAVWL E tELWL G tGHWL W DQ0-DQ7 V CC tVCHEL Note: Address are latched on the falling edge of W, Data is latched on the rising edge of W. 16/31 WRITE CYCLE VALID tWLAX tWHEH tWHGL tWLWH tWHWL tDVWH tWHDX VALID AI01365B ...

Page 17

... The temperature range –40 to 125 C is guaranteed at 70ns with High Speed Interface test condition and V (2) Parameter Standard Interface Min 1 WHQV WHQ7V Q7VQV M29F040 M29F040 -70 -90 Unit 10 10% CC Standard Interface Max Min Max ...

Page 18

... Note: 1. Time is measured to Data Polling or Toggle Bit, t 18/31 -120 Parameter Standard Interface Min 120 1 WHQV WHQ7V Q7VQV M29F040 -150 Unit 10 10% CC Standard Interface Max Min Max 150 ...

Page 19

... Figure 8. Write AC Waveforms, E Controlled A0-A18 W tWLEL G tGHEL E DQ0-DQ7 V CC tVCHWL Note: Address are latched on the falling edge of E, Data is latched on the rising edge of E. WRITE CYCLE VALID tELAX tAVEL tELEH tDVEH VALID M29F040 tEHWH tEHGL tEHEL tEHDX AI01366B 19/31 ...

Page 20

... EHQV2 (Block Erase) Notes: 1. All other timings are defined in Read AC Characteristics table the Program or Erase time. WHQ7V 3. The temperature range –40 to 125 C is guaranteed at 70ns with High Speed Interface test condition and V 20/31 (1) (3) M29F040 - Standard Standard ...

Page 21

... Notes: 1. All other timings are defined in Read AC Characteristics table the Program or Erase time. WHQ7V (1) M29F040 -120 150 10 Standard Standard Interface Interface Min Max Min 10 10 1 1 1 1.0 30 1.0 M29F040 Unit 10% Max s 30 sec s 30 sec sec s 30 sec 21/31 ...

Page 22

... M29F040 Figure 9. Data Polling DQ7 AC Waveforms 22/31 ...

Page 23

... Chip Program (Byte) Chip Erase (Preprogrammed) Chip Erase Block Erase (Preprogrammed) Block Erase Byte Program Program/Erase Cycles (per Block) Figure 11. Data Toggle Flowchart NO PASS AI01369 5%) M29F040 Min 10 100,000 M29F040 START READ DQ5 & DQ6 DQ6 NO = TOGGLE YES DQ5 = 1 YES READ DQ6 DQ6 NO = ...

Page 24

... M29F040 Figure 12. Data Toggle DQ6 AC Waveforms 24/31 ...

Page 25

... ADDRESS: A0 and A16, A17, A18 DEFINING BLOCK START BLOCK ADDRESS on A16, A17, A18 Wait 4µ Wait 100µ Wait 4µs READ DQ0 at PROTECTION NO DQ0 = 1 YES ++ PASS FAIL M29F040 NO YES AI01368D 25/31 ...

Page 26

... M29F040 Figure 14. Block Unprotecting Flowchart NO ++n = 1000 YES FAIL Note kept at V during unprotection algorithm in order to secure best unprotection verification. During all other protection status IH reads, A6 must be kept 26/31 START PROTECT ALL BLOCKS A6, A12, A16 = Wait 4µ Wait 4µ ...

Page 27

... M29F040 is replaced by the new version M29F040B Device are shipped from the factory with the memory content erased (to FFh). For a list of available options (Speed, Package, etc...) or for further information on any aspect of this device, please contact the STMicroelectronics Sales Office nearest to you. ...

Page 28

... M29F040 PLCC32 - 32 lead Plastic Leaded Chip Carrier, rectangular Symb Typ 1. 0. PLCC Drawing is not to scale. 28/31 mm Min Max Typ 2.54 3.56 1.52 2.41 – 0.38 0.33 0.53 0.66 0.81 12.32 12.57 11.35 11.56 9.91 10.92 14.86 15.11 13.89 14.10 12.45 13.46 – – 0.050 0.00 0.25 – – 0.035 0. 0.51 (.020) 1.14 (.045) ...

Page 29

... N/2 TSOP-a Drawing is not to scale. mm Min Max Typ 1.20 0.05 0.15 0.95 1.05 0.15 0.27 0.10 0.21 19.80 20.20 18.30 18.50 7.90 8. 0.020 0. DIE C M29F040 inches Min Max 0.047 0.002 0.007 0.037 0.041 0.006 0.011 0.004 0.008 0.780 0.795 0.720 0.728 0.311 0.319 - - 0.020 0.028 0.004 29/31 ...

Page 30

... M29F040 TSOP32 Reverse Pinout - 32 lead Plastic Thin Small Outline 20mm Symb Typ 0. N/2 TSOP-b Drawing is not to scale. 30/31 mm Min Max Typ 1.20 0.05 0.17 0.95 1.05 0.15 0.27 0.10 0.21 19.80 20.20 18.30 18.50 7.90 8.10 – – 0.020 0. DIE C inches Min Max 0.047 0.002 0.006 0.037 0.041 ...

Page 31

... All other names are the property of their respective owners. Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. © 1999 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES http://www.st.com M29F040 31/31 ...

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