lh28f640 Sharp Microelectronics of the Americas, lh28f640 Datasheet - Page 4

• Manufacturer Part Number: lh28f640
• Description: 64m X16 Flash Memory
• Manufacturer: Sharp Microelectronics of the Americas

The product, which is Page Mode Flash memory, is a low power, high density, low cost, nonvolatile read/write storage
solution for a wide range of applications. The product can operate at V
greatly extends battery life for portable applications.
The product provides high performance asynchronous page mode. It allows code execution directly from Flash, thus
eliminating time consuming wait states.
The memory array block architecture utilizes Enhanced Data Protection features, and provides separate Parameter and Main
Blocks that provide maximum flexibility for safe nonvolatile code and data storage.
Fast program capability is provided through the use of high speed Page Buffer Program.
Special OTP (One Time Program) block provides an area to store permanent code such as a unique number.
* ETOX is a trademark of Intel Corporation.
• 90/35ns 8-Word Page Mode
• 2.7V Read and Write Operations
• Automatic Power Savings Mode Reduces I
• 5 s Typical Erase/Program Suspends
• 4-Word Factory-Programmed Area
• 4-Word User-Programmable Area
• 16-Word Page Buffer
• Eight 4K-word Parameter Blocks
• One-hundred and twenty-seven 32K-word Main
• Top Parameter Location
64M density with 16Bit I/O Interface
High Performance Reads
Low Power Operation
Enhanced Code + Data Storage
OTP (One Time Program) Block
High Performance Program with Page Buffer
Operating Temperature 0 C to +70 C
Flexible Blocking Architecture
CMOS Process (P-type silicon substrate)
in Static Mode
Blocks
Page Mode Flash MEMORY
LH28F640BFN-PTTLZ2
64Mbit (4Mbit 16)
CCR
LHF64FZ2
• Individual Block Lock and Block Lock-Down with
• All blocks are locked at power-up or device reset.
• Block Erase, Full Chip Erase, (Page Buffer) Word
• 3.0V Low-Power
• Basic Command Set
• Common Flash Interface (CFI)
• Minimum 100,000 Block Erase Cycles
Enhanced Data Protection Features
Automated Erase/Program Algorithms
Cross-Compatible Command Support
Extended Cycling Capability
44-Lead SOP
ETOX
Not designed or rated as radiation hardened
Zero-Latency
Program Lockout during Power Transitions
Programming
CC
=2.7V-3.6V. Its low voltage operation capability
TM*
Flash Technology
s/Word (Typ.)
Rev. 2.41
2